All Transistors. 2SD2257 Datasheet

 

2SD2257 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD2257

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 4000

Noise Figure, dB: -

Package: ISO220

2SD2257 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD2257 Datasheet (PDF)

1.1. 2sd2257.pdf Size:135K _toshiba

2SD2257
2SD2257

2SD2257 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2257 High-Power Switching Applications Unit: mm Hammer Drive, Pulse Motor Drive Applications High DC current gain: hFE = 2000 (min) Low saturation voltage: VCE (sat) = 1.5 V (max) Complementary to 2SB1495 Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Coll

1.2. 2sd2257.pdf Size:116K _inchange_semiconductor

2SD2257
2SD2257

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2257 DESCRIPTION Ў¤ With TO-220F package Ў¤ High DC current gain Ў¤ Low saturation voltage Ў¤ Complement to type 2SB1495 Ў¤ DARLINGTON APPLICATIONS Ў¤ High power switching applications Ў¤ Hammer drive,pulse motor drive applications PINNING PIN 1 2 3 Base Collector DESCRIPTION Absolute maximu

4.1. 2sd2251.pdf Size:95K _sanyo

2SD2257
2SD2257

Ordering number:EN3741A NPN Triple Diffused Planar Silicon Transistor 2SD2251 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit:mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SD2251] On-chip damper diode. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 : Base 1 2 3 2

4.2. 2sd2252.pdf Size:88K _sanyo

2SD2257
2SD2257

Ordering number:EN3320 NPN Triple Diffused Planar Silicon Transistor 2SD2252 Color TV Horizontal Deflection Output Applications Applications Package Dimensions Color TV horizontal diflection output. unit:mm Color display horizontal deflection output. 2039D [2SD2252] 16.0 5.6 Features 3.4 3.1 High-speed : tf=100ns. High breakdown voltage : VCBO=1500V. High reliabili

4.3. 2sd2258 e.pdf Size:56K _panasonic

2SD2257
2SD2257

Transistor 2SD2258 (Tentative) Unit: mm Silicon NPN epitaxial planer type 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 For low-frequency output amplification 0.65 max. Features Darlington connection. High foward current transfer ratio hFE. +0.1 0.450.05 Allowing supply with the radial taping. 2.5 0.5 2.5 0.5 1 2 3 Absolute Maximum Ratings (Ta=25?C) Note: In addition to

4.4. 2sd2254.pdf Size:57K _panasonic

2SD2257
2SD2257

Power Transistors 2SD2254 Silicon NPN triple diffusion planar type Darlington For power amplification Unit: mm ? 3.3 0.2 Complementary to 2SB1492 20.0 0.5 5.0 0.3 3.0 Features Optimum for 60W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.5V 1.5 1.5 2.0 0.3 2.7 0.3 3.0 0.3 Absolute Maximum Ratings (T

4.5. 2sd2255.pdf Size:55K _panasonic

2SD2257
2SD2257

Power Transistors 2SD2255 Silicon NPN triple diffusion planar type Darlington For power amplification Unit: mm Complementary to 2SB1493 15.0 0.5 4.5 0.2 13.0 0.5 10.5 0.5 2.0 0.1 Features Optimum for 60W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.5V ? 3.2 0.1 2.0 0.2 1.4 0.3 Absolute Maximum Rat

4.6. 2sd2258.pdf Size:51K _panasonic

2SD2257
2SD2257

Transistor 2SD2258 (Tentative) Unit: mm Silicon NPN epitaxial planer type 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 For low-frequency output amplification 0.65 max. Features Darlington connection. High foward current transfer ratio hFE. +0.1 0.450.05 Allowing supply with the radial taping. 2.5 0.5 2.5 0.5 1 2 3 Absolute Maximum Ratings (Ta=25?C) Note: In addition to

4.7. 2sd2259.pdf Size:38K _panasonic

2SD2257
2SD2257

Transistor 2SD2259 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.65 max. Allowing supply with the radial taping. +0.1 0.450.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter

4.8. 2sb1492 2SD2254.pdf Size:57K _panasonic

2SD2257
2SD2257

Power Transistors 2SD2254 Silicon NPN triple diffusion planar type Darlington For power amplification Unit: mm ? 3.3 0.2 Complementary to 2SB1492 20.0 0.5 5.0 0.3 3.0 Features Optimum for 60W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.5V 1.5 1.5 2.0 0.3 2.7 0.3 3.0 0.3 Absolute Maximum Ratings (T

4.9. 2sd2259 e.pdf Size:43K _panasonic

2SD2257
2SD2257

Transistor 2SD2259 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.65 max. Allowing supply with the radial taping. +0.1 0.450.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter

4.10. 2sd2250.pdf Size:57K _panasonic

2SD2257
2SD2257

Power Transistors 2SD2250 Silicon NPN triple diffusion planar type Darlington For power amplification Unit: mm ? 3.3 0.2 Complementary to 2SB1490 20.0 0.5 5.0 0.3 3.0 Features Optimum for 80W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.5V 1.5 1.5 2.0 0.3 2.7 0.3 3.0 0.3 Absolute Maximum Ratings (T

4.11. 2sd2256.pdf Size:36K _hitachi

2SD2257
2SD2257

2SD2256 Silicon NPN Triple Diffused ADE-208-928 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SB1494 Features High breakdown voltage and high current (VCEO = 120 V, IC = 25 A) Built-in C-E diode Outline TO-3P 2 1 1. Base ID 2. Collector (Flange) 3. Emitter 1 3 2 3 2SD2256 Absolute Maximum Ratings (Ta = 25C) Item Symbol

4.12. 2sd2253.pdf Size:99K _wingshing

2SD2257

2SD2253 Silicon NPN Triple Diffused Power Transistor GENERAL DESCRIPTION HORIZONAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV High Speed Switching Applications TO-3PM QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-Base voltage VCB0 - - 1700 V Collector-emitter voltage (open base) VCEO - 600 V Collector current (DC) IC - 6 A Collector current p

4.13. 2sd2256.pdf Size:75K _inchange_semiconductor

2SD2257
2SD2257

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2256 DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.)@ IC= 12A, VCE= 4V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min) APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO

4.14. 2sd2253.pdf Size:117K _inchange_semiconductor

2SD2257
2SD2257

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2253 DESCRIPTION Ў¤ With TO-3P(H)IS package Ў¤ Built-in damper diode Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Color TV horizontal output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Ў¤ Absolute maximum ratings (Ta=25Ўж

4.15. 2sd2251.pdf Size:172K _inchange_semiconductor

2SD2257
2SD2257

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2251 DESCRIPTION Ў¤ With TO-3PML package Ў¤ High speed Ў¤ High breakdown voltage Ў¤ High reliability Ў¤ Built-in damper diode APPLICATIONS Color TV horizontal deflection output Ў¤ PINNING PIN 1 2 3 Base Collector DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO I

4.16. 2sd2250.pdf Size:271K _inchange_semiconductor

2SD2257
2SD2257

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2250 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 6A, VCE= 5V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 6A, IBB= 6mA) ·Complement to Type 2SB1490 APPLICATIONS ·Designed for power a

Datasheet: 2SD2241 , 2SD2242 , 2SD2242A , 2SD2248 , 2SD2249 , 2SD2250 , 2SD2253 , 2SD2256 , SS8550 , 2SD226 , 2SD226A , 2SD226B , 2SD227 , 2SD2271 , 2SD227G , 2SD227O , 2SD227Y .

 


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