All Transistors. 2SD836 Datasheet

 

2SD836 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD836

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 35 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 6000

Noise Figure, dB: -

Package: TO220

2SD836 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD836 Datasheet (PDF)

5.1. 2sd834.pdf Size:125K _fuji

2SD836
2SD836

5.2. 2sd835.pdf Size:101K _fuji

2SD836
2SD836

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

5.3. 2sd833.pdf Size:96K _fuji

2SD836
2SD836

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

5.4. 2sd838.pdf Size:25K _no

2SD836

5.5. 2sd834.pdf Size:117K _inchange_semiconductor

2SD836
2SD836

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220 package Ў¤ High DC current gain Ў¤ DARLINGTON Ў¤ Low collector saturation voltage Ў¤ Excellent safe operating area APPLICATIONS Ў¤ Electronic ignitor Ў¤ Relay and solenoid drivers Ў¤ Switching regulators Ў¤ Motor controls PINNING PIN 1 2 3 Base DESCRIPTION 2SD834 Ab

5.6. 2sd835.pdf Size:313K _inchange_semiconductor

2SD836
2SD836

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD835 DESCRIPTION ·High DC Current Gain- : hFE= 400(Min) @IC= 4A ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.) @ IC= 4A APPLICATIONS ·Electronic ignitor ·Relay& solenoid drivers ·Motor controls ·Switching regulators ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARA

5.7. 2sd833.pdf Size:262K _inchange_semiconductor

2SD836
2SD836

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD833 DESCRIPTION ·High DC Current Gain- : hFE= 4000(Min) @IC= 3A ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.) @ IC= 3A APPLICATIONS ·Audio power amplifiers ·Relay& solenoid drivers ·Motor controls ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=2

5.8. 2sd837.pdf Size:133K _inchange_semiconductor

2SD836
2SD836

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD837 DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·High Switching Speed APPLICATIONS ·Audio power amplifiers ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Vo

Datasheet: 2SD829 , 2SD83 , 2SD830 , 2SD831 , 2SD832 , 2SD833 , 2SD834 , 2SD835 , MJE13003 , 2SD836A , 2SD836B , 2SD837 , 2SD837A , 2SD837B , 2SD838 , 2SD839 , 2SD84 .

 


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