2N2501 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N2501
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 350 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO18
2N2501 Transistor Equivalent Substitute - Cross-Reference Search
2N2501 Datasheet (PDF)
ixbt2n250.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 2500VIXBH2N250BIMOSFETTMIXBT2N250IC110 = 2AVCE(sat) 3.50VMonolithic Bipolar MOSTransistor TO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 2500 VVCGR TJ = 25C to 150C, RGE = 1M 2500 VGC (TAB)CVGES Continuous 20 VEVGEM Transient 30 VIC
ixbh42n250.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 2500VIXBH42N250BIMOSFETTM MonolithicIC110 = 42ABipolar MOS TransistorVCE(sat) 3.0VTO-247 ADSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 2500 VGC TabVCGR TJ = 25C to 150C, RGE = 1M 2500 VEVGES Continuous 25 VG = Gate C = CollectorVGEM Transient 35
ixgh2n250.pdf
Advance Technical InformationHigh Voltage IGBTsVCES = 2500VIXGH2N250IXGT2N250IC110 = 2Afor Capacitor DischargeVCE(sat) 3.1VApplicationsTO-247 (IXGH)Symbol Test Conditions Maximum RatingsGC (TAB)VCES TC = 25C to 150C 2500 VCEVCGR TJ = 25C to 150C, RGE = 1M 2500 VVGES Continuous 20 VVGEM Transient 30 VTO-268 (IXGT)IC2
ixgt2n250.pdf
Advance Technical InformationHigh Voltage IGBTsVCES = 2500VIXGH2N250IXGT2N250IC110 = 2Afor Capacitor DischargeVCE(sat) 3.1VApplicationsTO-247 (IXGH)Symbol Test Conditions Maximum RatingsGC (TAB)VCES TC = 25C to 150C 2500 VCEVCGR TJ = 25C to 150C, RGE = 1M 2500 VVGES Continuous 20 VVGEM Transient 30 VTO-268 (IXGT)IC2
ixth02n250 ixtv02n250s.pdf
High VoltageIXTH02N250VDSS = 2500VPower MOSFETsID25 = 200mA IXTV02N250S RDS(on) 450 N-Channel Enhancement ModeFast Intrinsic DiodeTO-247 (IXTH)GD D (Tab)SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 2500 VPLUS220SMD (IXTV_S)VDGR TJ = 25C to 150C, RGS = 1M 2500 VVGSS Continuous 20 VVGSM Transient
ixbh2n250.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 2500VIXBH2N250BIMOSFETTMIXBT2N250IC110 = 2AVCE(sat) 3.50VMonolithic Bipolar MOSTransistor TO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 2500 VVCGR TJ = 25C to 150C, RGE = 1M 2500 VGC (TAB)CVGES Continuous 20 VEVGEM Transient 30 VIC
ixta02n250hv.pdf
Advance Technical InformationHigh VoltageIXTA02N250HVVDSS = 2500VPower MOSFETID25 = 200mA RDS(on) 450 N-Channel Enhancement ModeFast Intrinsic DiodeTO-263ABGS D (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 2500 VG = Gate D = DrainVDGR TJ = 25C to 150C, RGS = 1M 2500 VS = Source Tab = DrainVGSS
Datasheet: 2N2491 , 2N2492 , 2N2493 , 2N2494 , 2N2495 , 2N2496 , 2N25 , 2N250 , 2N2907 , 2N2509 , 2N250A , 2N251 , 2N2510 , 2N2511 , 2N2512 , 2N2514 , 2N2515 .
