All Transistors. BC858CWT1 Datasheet

 

BC858CWT1 Datasheet, Equivalent, Cross Reference Search

Type Designator: BC858CWT1

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 300 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 520

Noise Figure, dB: -

Package: SOT323

BC858CWT1 Transistor Equivalent Substitute - Cross-Reference Search

 

BC858CWT1 Datasheet (PDF)

3.1. bc858cw-g.pdf Size:140K _upd

BC858CWT1
BC858CWT1

Small Signal Transistor BC856AW-G Thru. BC858CW-G (PNP) RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications SOT-323 -Power dissipation PCM: 0.15W (@TA=25°C) 0.087 (2.20) 0.079 (2.00) -Collector current 3 ICM: -0.1A -Collector-base voltage 0.053(1.35) 0.045(1.15) VCBO: BC856W= -80V BC857W= -50V 1 2 0.006 (0.15) BC85

4.1. bc858cdxv6t1g.pdf Size:55K _upd

BC858CWT1
BC858CWT1

BC858CDXV6T1, BC858CDXV6T5 Dual General Purpose Transistor PNP Dual http://onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low (3) (2) (1) power surface mount applications. Features Q1 Q2 • These are Pb-Free Devices MAXIMUM RATINGS (4) (5) (6) Rating Symbol Value Unit Collector -Emitter Voltag

4.2. bc858clt1g bc857alt1g.pdf Size:801K _upd

BC858CWT1
BC858CWT1

BC856ALT1G Series, SBC856ALT1G Series General Purpose Transistors PNP Silicon http://onsemi.com Features • S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable 1 • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS BASE Compliant 2 EMITTER 3 MAXIMUM RATINGS

4.3. bc858clt3g bc856alt1g.pdf Size:801K _upd

BC858CWT1
BC858CWT1

BC856ALT1G Series, SBC856ALT1G Series General Purpose Transistors PNP Silicon http://onsemi.com Features • S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable 1 • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS BASE Compliant 2 EMITTER 3 MAXIMUM RATINGS

4.4. bc856a bc857b bc858c sot-23.pdf Size:195K _mcc

BC858CWT1
BC858CWT1

BC856A MCC Micro Commercial Components TM THRU 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 BC858C Fax: (818) 701-4939 Features PNP Small Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Signal Transistor Moisure Sensitivity Level 1 Ide

4.5. nsvbc858clt1g.pdf Size:86K _onsemi

BC858CWT1
BC858CWT1

BC856ALT1G Series General Purpose Transistors PNP Silicon Features http://onsemi.com • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 COLLECTOR Qualified and PPAP Capable 3 • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 EMITTER MAXIMUM RATINGS (TA = 25°C unless other

4.6. bc858cdxv6t1-5.pdf Size:56K _onsemi

BC858CWT1
BC858CWT1

BC858CDXV6T1, BC858CDXV6T5 Dual General Purpose Transistor PNP Dual http://onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low (3) (2) (1) power surface mount applications. Features Q1 Q2 These are Pb-Free Devices MAXIMUM RATINGS (4) (5) (6) Rating Symbol Value Unit Collector -Emitter Voltage VCE

4.7. bc856bdw1t1g bc857bdw1t1g bc858cdw1t1g.pdf Size:172K _onsemi

BC858CWT1
BC858CWT1

BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors http://onsemi.com PNP Duals (3) (2) (1) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. Q1 Q2 Features These Devices are Pb-Free, Halogen Free/BFR Free an

4.8. lbc858cdw1t1g.pdf Size:178K _lrc

BC858CWT1
BC858CWT1

LESHAN RADIO COMPANY, LTD. Dual General Purpose LBC85** DW1T1G Transistors S-LBC85** DW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is 6 5 designed for low power surface mount applications. 4 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other A

4.9. lbc858clt1g.pdf Size:158K _lrc

BC858CWT1
BC858CWT1

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G Series PNP Silicon S-LBC857CLT1G • Moisture Sensitivity Level: 1 Series • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements. 3 • S- Prefix for Automotive and Other Applications Requiring Unique Site an

Datasheet: BC858BLT1 , BC858BR , BC858BW , BC858BWT1 , BC858C , BC858CLT1 , BC858CR , BC858CW , 2SC1815 , BC859 , BC859A , BC859ALT1 , BC859AR , BC859AW , BC859AWT1 , BC859B , BC859BLT1 .

 


BC858CWT1
  BC858CWT1
  BC858CWT1
 

social 

LIST

Last Update

BJT: M54561P | M54532P | M54532FP | M54531WP | M54531P | M54531FP | M54530P | M54530FP | M54522WP | LBCW65ALT1G | LBC858CWT1G | LBC848AWT1G | LBC847CPDW1T1G | LBC846ADW1T1G | LBC817-40DPMT1G | LBC817-40DMT1G | LBC817-25DMT1G | LBC817-16DPMT1G | LBC817-16DMT1G | LBC807-40DMT1G |