All Transistors. 2N2893 Datasheet

 

2N2893 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N2893

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 70 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO59

2N2893 Transistor Equivalent Substitute - Cross-Reference Search

 

2N2893 Datasheet (PDF)

5.1. 2n2895.pdf Size:577K _rca

2N2893

5.2. 2n2896.pdf Size:501K _rca

2N2893

5.3. 2n2898.pdf Size:171K _rca

2N2893

5.4. 2n2899.pdf Size:156K _rca

2N2893

5.5. 2n2897.pdf Size:552K _rca

2N2893

5.6. 2n2894ac1a.pdf Size:274K _upd

2N2893
2N2893

HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR 2N2894AC1 • Hermetic Ceramic Surface Mount Package (SOT23 Compatible) • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage -12V VCEO Collecto

5.7. 2n2894ac1b.pdf Size:274K _upd

2N2893
2N2893

HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR 2N2894AC1 • Hermetic Ceramic Surface Mount Package (SOT23 Compatible) • Silicon Planar Epitaxial PNP Transistor • High Speed low Saturation Switching • Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage -12V VCEO Collecto

5.8. 2n2891smd05.pdf Size:250K _upd

2N2893
2N2893

SILICON NPN TRANSISTOR 2N2891SMD05 • V(BR)CEO = 80V (Min). • Hermetic Ceramic Surface Mount Package • Ideally Suited For Low Frequency Large Signal Applications (High Voltage). • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 100V VCEO Collector – Emitter Voltage 80V VEBO Emitter –

5.9. 2n2896csm4.pdf Size:19K _upd

2N2893
2N2893

2N2896CSM4 MECHANICAL DATA Dimensions in mm (inches) NPN SILICON TRANSISTOR 1.40 ± 0.15 5.59 ± 0.13 (0.055 ± 0.006) (0.22 ± 0.005) 0.25 ± 0.03 (0.01 ± 0.001) FEATURES 0.23 rad. (0.009) 3 2 0.23 • NPN High Voltage Planar Transistor 4 1 min. (0.009) • Hermetic Ceramic Surface Mount 1.02 ± 0.20 2.03 ± 0.20 Package (0.04 ± 0.008) (0.08 ± 0.008) • Full Screenin

5.10. 2n2896x.pdf Size:225K _upd

2N2893
2N2893

SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2896X • High Voltage • Hermetic TO-18 Metal package. • Ideally suited for General Purpose Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 140V VCEO Collector – Emitter Voltage 90V VCER Collector – Emitter Voltage 140

5.11. 2n2894adcsm.pdf Size:33K _upd

2N2893
2N2893

2N2894ADCSM DUAL HIGH SPEED, MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED MECHANICAL DATA CERAMIC SURFACE MOUNT PACKAGE Dimensions in mm (inches) FEATURES • SILICON PLANAR EPITAXIAL DUAL PNP 2.29 ± 0.20 1.65 ± 0.13 1.40 ± 0.15 (0.09 ± 0.008) (0.065 ± 0.005) (0.055 ± 0.006) TRANSISTOR • HERMETIC CERAMIC SURFACE MOUNT 2 3 PACKAGE 1 4 • CECC SCR

5.12. 2n2894 2n3209.pdf Size:113K _st

2N2893
2N2893

5.13. 2n2895.pdf Size:10K _semelab

2N2893

2N2895 Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar NPN Device. VCEO = 65V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV a

5.14. 2n2894a.pdf Size:10K _semelab

2N2893

2N2894A Dimensions in mm (inches). Bipolar PNP Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar PNP Device. VCEO = 12V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTX

5.15. 2n2891.pdf Size:11K _semelab

2N2893

2N2891 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 2A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can

5.16. 2n2894.pdf Size:15K _semelab

2N2893
2N2893

2N2894 PNP SILICON MECHANICAL DATA Dimensions in mm (inches) TRANSISTOR 5.84 (0.230) 5.31 (0.209) FEATURES 4.95 (0.195) 4.52 (0.178) SILICON PNP TRANSISTOR HIGH SPEED, LOW SATURATION SWITCH APPLICATIONS: 0.48 (0.019) GENERAL PURPOSE SWITCHING 0.41 (0.016) dia. APPLICATIONS 2.54 (0.100) Nom. 3 1 2 TO18 Underside View PIN1 EMITER PIN 2 BASE PIN 3 COLLECTOR ABSOLUT

Datasheet: 2N2886 , 2N2887 , 2N2890 , 2N2891 , 2N2891LCC4 , 2N2891LL , 2N2891SM , 2N2892 , BD135 , 2N2894 , 2N2894A , 2N2894ACSM , 2N2894AQF , 2N2894CSM , 2N2894DCSM , 2N2895 , 2N2896 .

 


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