BD950 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD950
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO220
BD950 Transistor Equivalent Substitute - Cross-Reference Search
BD950 Datasheet (PDF)
bd949 bd950 bd951 bd952 bd953 bd954 bd955 bd956.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package BD949, BD951, BD953, BD955BD950, BD952, BD954, BD956BD949, 951, 953, 955 NPN PLASTIC POWER TRANSISTORSBD950, 952, 954, 956 PNP PLASTIC POWER TRANSISTORSPower Amplifier and Switching ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR12
bd950.pdf
isc Silicon PNP Power Transistor BD950DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEODC Current Gain-: h = 40(Min)@ I = -500mAFE CComplement to Type BD949Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
bd950f bd952f bd954f bd956f.pdf
isc Silicon PNP Power Transistor BD950F/952F/954F/956FDESCRIPTIONDC Current Gain-: h = 40(Min)@ I = -500mAFE CComplement to Type BD949F/951F/953F/955FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITBD9
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
