All Transistors. BF660W Datasheet

 

BF660W Datasheet, Equivalent, Cross Reference Search

Type Designator: BF660W

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.11 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.025 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 400 MHz

Collector Capacitance (Cc): 0.6 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SOT23

BF660W Transistor Equivalent Substitute - Cross-Reference Search

 

BF660W Datasheet (PDF)

1.1. bf660w.pdf Size:59K _siemens

BF660W
BF660W

BF 660W PNP Silicon RF Transistor For VHF oscillator applications Type Marking Ordering Code Pin Configuration Package BF 660W LEs Q62702-F1568 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 30 V Collector-base voltage VCBO 40 Emitter-base voltage VEBO 4 Collector current IC 25 mA Base current IB 5 Total power dissipation Ptot mW

5.1. bf660.pdf Size:39K _siemens

BF660W
BF660W

PNP Silicon RF Transistor BF 660 For VHF oscillator applications Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BF 660 LEs Q62702-F982 B E C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 30 V Collector-base voltage VCB0 40 Emitter-base voltage VEB0 4 Collector current IC 25 mA Emitter current IE 30 Total power dissipat

Datasheet: BF643P2 , BF643W , BF643W3 , BF657 , BF658 , BF659 , BF660 , BF660R , BU508A , BF666 , BF667 , BF668 , BF679 , BF679M , BF679S , BF679T , BF680 .

 


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