All Transistors. BFS17S Datasheet

 

BFS17S Datasheet, Equivalent, Cross Reference Search

Type Designator: BFS17S

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 2500 MHz

Collector Capacitance (Cc): 1 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: SOT363

BFS17S Transistor Equivalent Substitute - Cross-Reference Search

 

BFS17S Datasheet (PDF)

1.1. bfs17s.pdf Size:55K _siemens

BFS17S
BFS17S

BFS 17S NPN Silicon RF Transistor For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration Package BFS 17S MCs Q62702-F1645 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Maximum Ratings of any single Transistor Parameter Symbol Values Unit Collector-emitter voltage VCEO 15 V Collector-base voltage VCBO 25

5.1. bfs17lt1.pdf Size:52K _motorola

BFS17S
BFS17S

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BFS17LT1/D The RF Line NPN Silicon BFS17LT1 High-Frequency Transistor Designed primarily for use in highgain, lownoise amplifier, oscillator and mixer applications. Packaged for thick or thin film circuits using surface mount components. T1 suffix indicates tape and reel packaging of 3,000 units per reel. RF TRANSISTOR M

5.2. bfs17a.pdf Size:186K _philips

BFS17S
BFS17S

DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification September1995 NXP Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. handbook, halfpage 3 APPLICATIONS ? It is intended for RF applications such as oscillators in TV tuners. 12 Top view MSB003 PINNING PIN DESC

5.3. bfs17a 1.pdf Size:50K _philips

BFS17S
BFS17S

DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. handbook, 2 columns 21 APPLICATIONS It is intended for RF applications such as oscillators in T

5.4. bfs17w.pdf Size:170K _philips

BFS17S
BFS17S

DISCRETE SEMICONDUCTORS DATA SHEET BFS17W NPN 1 GHz wideband transistor Product specification 1995 Sep 04 Supersedes data of November 1992 NXP Semiconductors Product specification NPN 1 GHz wideband transistor BFS17W APPLICATIONS PINNING Primarily intended as a mixer, PIN DESCRIPTION 3 handbook, 2 columns oscillator and IF amplifier in UHF and 1 base VHF tuners. 2 emitter 3

5.5. bfs17w 2.pdf Size:34K _philips

BFS17S
BFS17S

DISCRETE SEMICONDUCTORS DATA SHEET BFS17W NPN 1 GHz wideband transistor 1995 Sep 04 Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17W APPLICATIONS PINNING handbook, 2 columns 3 Primarily intended as a mixer, PIN DESCRIPTION oscillator and IF amplifier in U

5.6. bfs17.pdf Size:44K _philips

BFS17S
BFS17S

DISCRETE SEMICONDUCTORS DATA SHEET BFS17 NPN 1 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic SOT23 package. handbook, 2 columns 21 APPLICATIONS A wide range of RF applications such as: Mixers and oscilla

5.7. bfs17a 2.pdf Size:37K _philips

BFS17S
BFS17S

DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor September1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. handbook, halfpage 3 APPLICATIONS It is intended for RF applications such as oscillators in TV tu

5.8. bfs17 2.pdf Size:33K _philips

BFS17S
BFS17S

DISCRETE SEMICONDUCTORS DATA SHEET BFS17 NPN 1 GHz wideband transistor September 1995 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BFS17 DESCRIPTION NPN transistor in a plastic SOT23 package. handbook, halfpage 3 APPLICATIONS A wide range of RF applications such as: Mixers and oscillator

5.9. bfs17p.pdf Size:48K _siemens

BFS17S
BFS17S

BFS 17P NPN Silicon RF Transistor For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA CECC-type available: CECC 50002/248. Type Marking Ordering Code Pin Configuration Package BFS 17P MCs Q62702-F940 1 = B 2 = E 3 = C SOT-23 Maximum Ratings of any single Transistor Parameter Symbol Values Unit Collector-emitter voltage VCEO 15 V Collector-base voltage VCBO 25

5.10. bfs17w.pdf Size:34K _siemens

BFS17S
BFS17S

BFS 17W NPN Silicon RF Transistor For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Type Marking Ordering Code Pin Configuration Package BFS 17W MCs Q62702-F1645 1 = B 2 = E 3 = C SOT-323 Maximum Ratings of any single Transistor Parameter Symbol Values Unit Collector-emitter voltage VCEO 15 V Collector-base voltage VCBO 25 Emitter-base voltage VEBO 2.5 Collec

5.11. bfs17.pdf Size:47K _rohm

BFS17S
BFS17S

BFS17 Transistors NPN small signal transistor BFS17 Features Dimensions (Unit : mm) 1) Ideal for RF applications. BFS17 2) Mixers and oscillations in TV tuners. 3) RF communications equipment. 2.9 0.95 0.4 0.45 (3) Packaging specifications (2) (1) 0.95 0.95 Package Taping 0.15 1.9 Type Code T116 (1)Emitter Basic ordering unit (pieces) 3000 (2)Base Each lead has s

5.12. bfs17n.pdf Size:120K _diodes

BFS17S
BFS17S

A Product Line of Diodes Incorporated BFS17N NPN RF TRANSISTOR IN SOT-23 Features Mechanical Data Lead, Halogen, and Antimony Free/RoHS Compliant (Note 1) Case: SOT-23 "Green" Device (Note 2) Case material: molded Plastic. Green molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminals: Matte Tin Finish Wei

5.13. bfs17a.pdf Size:1043K _kexin

BFS17S
BFS17S

SMD Type Transistors NPN Transistors BFS17A (KFS17A) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=25mA 1 2 ● Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 2

5.14. bfs17.pdf Size:869K _kexin

BFS17S
BFS17S

SMD Type Transistors NPN Transistors BFS17 (KFS17) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=25mA ● Collector Emitter Voltage VCEO=15V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 C

Datasheet: BFS17 , BFS17A , BFS17AR , BFS17AW , BFS17L , BFS17LT1 , BFS17P , BFS17R , 2N3906 , BFS17W , BFS18 , BFS18R , BFS19 , BFS19R , BFS20 , BFS20R , BFS22 .

 


BFS17S
  BFS17S
  BFS17S
 

social 

LIST

Last Update

BJT: M54561P | M54532P | M54532FP | M54531WP | M54531P | M54531FP | M54530P | M54530FP | M54522WP | LBCW65ALT1G | LBC858CWT1G | LBC848AWT1G | LBC847CPDW1T1G | LBC846ADW1T1G | LBC817-40DPMT1G | LBC817-40DMT1G | LBC817-25DMT1G | LBC817-16DPMT1G | LBC817-16DMT1G | LBC807-40DMT1G |