BSS71S Datasheet, Equivalent, Cross Reference Search
Type Designator: BSS71S
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 4
Noise Figure, dB: -
Package: TO236
BSS71S Transistor Equivalent Substitute - Cross-Reference Search
BSS71S Datasheet (PDF)
bss71rev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSS71/DHigh Voltage TransistorsNPN SiliconCOLLECTORBSS7132BASE1EMITTERMAXIMUM RATINGSRating Symbol Value Unit321CollectorEmitter Voltage VCEO 200 VdcCollectorBase Voltage VCBO 200 VdcEmitterBase Voltage VEBO 6.0 VdcCASE 2203, STYLE 1Collector Current Continuous IC 0.5 Adc TO1
bss71csm.pdf
BSS71CSMDimensions in mm (inches). Bipolar NPN Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31rad.(0.012) Ceramic Surface Mount 3Package for High Reliability Applications 211.91 0.10(0.075 0.004)A0.31rad.Bipolar NPN Device. (0.012)3.05 0.13(0.12 0.005)1.40(0.055)1.02 0.10max.VCEO = 200V A =(0.04 0.004
bss71dcsm.pdf
BSS71DCSMDimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar NPN Devices. A0.236 5rad. (0.009) V = 200V CEO6.22 0.13 A = 1.27 0.13I = 0.5A C(0.0
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
