All Transistors. BU407FI Datasheet

 

BU407FI Datasheet, Equivalent, Cross Reference Search

Type Designator: BU407FI

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 330 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: ISO220

BU407FI Transistor Equivalent Substitute - Cross-Reference Search

 

BU407FI Datasheet (PDF)

4.1. bu407f.pdf Size:36K _st

BU407FI
BU407FI

BU407FI SILICON NPN TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR APPLICATIONS HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU407FI is a silicon epitaxial planar NPN 3 transistors in ISOWATT220 plastic package. 2 1 It is a fast switching, high voltage device for use in horizontal deflection output stages of medium ISOWATT220 and small screens MTV receivers with

5.1. bu406 bu407.pdf Size:100K _motorola

BU407FI
BU407FI

Order this document MOTOROLA by BU406/D SEMICONDUCTOR TECHNICAL DATA BU406 BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. 7 AMPERES NPN SILICON • High Voltage: VCEV = 330 or 400 V POWER TRANSISTORS • Fast Switching Speed: tf = 750 ns (max) IIIIIIIIIIIIIIIIIIIIIII 60 WATTS • Low Saturation

5.2. bu406-bu407d.pdf Size:66K _st

BU407FI
BU407FI

BU406D BU407D SILICON NPN SWITCHING TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR VERY HIGH SWITCHING SPEED APPLICATIONS: HORIZONTAL DEFLECTION FOR MONOCHROME TV 3 2 1 TO-220 DESCRIPTION The BU406D and BU407D are silicon planar epitaxial NPN transistors with integrated damper diode, in Jedec TO-220 plastic package. They are fast switching, devices for use i

 5.3. bu407 bu407h.pdf Size:46K _fairchild_semi

BU407FI
BU407FI

BU407/407H High Voltage Switching • Use In Horizontal Deflection Output Stage TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 330 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 7 A ICP Collector Cu

5.4. bu407.pdf Size:61K _samsung

BU407FI
BU407FI

BU407/407H NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TO-220 USE IN HORIZONTAL DEFLECTION OUTPUT STAGE ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 330 V Collector-Emitter Voltage VCEO 150 V Emitter-Base Voltage VEBO 6 V Collector Current IC 7 A 1.Base 2.Collector 3.Emitter Collector Peck Current ICM 10 A Base Current IB 4 A

 5.5. bu406 bu407.pdf Size:121K _onsemi

BU407FI
BU407FI

BU406, BU407 NPN Power Transistors These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. Features • High Voltage: VCEV = 330 or 400 V http://onsemi.com • Fast Switching Speed: tf = 750 ns (max) • Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A NPN SILICON • Pb-Free Packages are Available* POWER TRANSISTORS 7 AMPERES - 60 WA

5.6. bu407.pdf Size:135K _utc

BU407FI
BU407FI

UNISONIC TECHNOLOGIES CO., LTD BU407 NPN SILICON TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC BU407 is a NPN epitaxial planar transistor, 1 designed for use in TV Horizontal output and switching applications. TO-220 FEATURES * High breakdown voltage Lead-free: BU407L Halogen-free: BU407G ORDERING INFORMATION Ordering Number Pin Assignment Pack

5.7. bu406 bu407.pdf Size:361K _cdil

BU407FI
BU407FI

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC POWER TRANSISTORS BU406 BU407 TO-220 Plastic Package Horizontal Deflection Output Stages of TV and CRT ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL BU406 BU407 UNIT Collector Emitter Voltage VCEO 200 150 V Collector Base Voltage VCBO 400 330 V VCEV Collector Emitter Voltage 4

5.8. bu407h.pdf Size:264K _inchange_semiconductor

BU407FI
BU407FI

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU407H DESCRIPTION ·High Voltage: VCEV= 330V(Min) ·Fast Switching Speed- : tf= 750ns(Max) ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER

5.9. bu406dbu407d.pdf Size:61K _inchange_semiconductor

BU407FI
BU407FI

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU406D BU407D DESCRIPTION · ·With TO-220C package ·High voltage ·Fast switching speed ·Low saturation voltage ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection output stages of TV’s and CTV’s circuits PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mountin

5.10. bu407.pdf Size:103K _inchange_semiconductor

BU407FI
BU407FI

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU407 DESCRIPTION ·High Voltage: VCEV= 330V(Min) ·Fast Switching Speed- : tf= 750ns(Max) ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER V

Datasheet: BU361 , BU406 , BU406D , BU406F , BU406H , BU407 , BU407D , BU407F , 2N2222A , BU407H , BU408 , BU408D , BU409 , BU410 , BU411 , BU412 , BU413 .

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