All Transistors. BU941ZT Datasheet

 

BU941ZT Datasheet, Equivalent, Cross Reference Search

Type Designator: BU941ZT

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 350 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 300

Noise Figure, dB: -

Package: TO220

BU941ZT Transistor Equivalent Substitute - Cross-Reference Search

 

BU941ZT Datasheet (PDF)

1.1. bu941ztfp-zt bub941zt.pdf Size:413K _update

BU941ZT
BU941ZT

BU941ZT/BU941ZTFP BUB941ZT ® HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263) 3 3 POWER PACKAGE IN TUBE (NO SUFFIX) 2 2 OR IN TAPE & REEL (SUFFIX "T4") 1 1 TO-220 TO-220FP APPLICATIONS HIGH RUGGEDNESS ELECTRONIC IGNITI

1.2. bu941zt bu941ztfp bub941zt.pdf Size:89K _update

BU941ZT
BU941ZT

BU941ZT/BU941ZTFP BUB941ZT  HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263) 3 3 POWER PACKAGE IN TUBE (NO SUFFIX) 2 2 OR IN TAPE & REEL (SUFFIX ”T4”) 1 1 TO-220 TO-220FP APPLICATIONS HIGH RUGGEDNESS ELECTRONIC I

4.1. bu941zpfi.pdf Size:119K _inchange_semiconductor

BU941ZT
BU941ZT

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU941ZPFI DESCRIPTION Ў¤ With TO-3PML package Ў¤ DARLINGTON Ў¤ High breakdown voltage APPLICATIONS Ў¤ High ruggedness electronic ignitions PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Ў¤ Absolute maximum ratings (Ta

4.2. bu941zp.pdf Size:100K _inchange_semiconductor

BU941ZT
BU941ZT

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BU941ZP DESCRIPTION ·Built In Clamping Zener ·High Operating Junction Temperature APPLICATIONS ·Designed for use in automotive environment as electronic ignition power actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 350 V VEBO E

4.3. bu941ze3.pdf Size:221K _cystek

BU941ZT
BU941ZT

Spec. No. : C660E3 Issued Date : 2010.02.03 CYStech Electronics Corp. Revised Date : Page No. : 1/5 NPN Epitaxial Planar Transistor BVCEO 350V BU941ZE3 IC 15A RCESAT(MAX) 0.18Ω Features •High BVCEO •Low VCE(SAT) •High current capability •Built-in clamping zener •Pb-free lead plating package Applications •High ruggedness electronic ignitions Equivale

4.4. bu941zp3.pdf Size:243K _cystek

BU941ZT
BU941ZT

Spec. No. : C660P3 Issued Date : 2008.07.22 CYStech Electronics Corp. Revised Date :2011.01.04 Page No. : 1/5 NPN Epitaxial Planar Transistor BVCEO 350V IC 15A BU941ZP3 VCESAT(MAX) 2V @12A Features •High BVCEO •Low VCE(SAT) •High current capability •Built-in clamping zener •Pb-free lead plating package Applications •High ruggedness electronic ignitions

4.5. bu941zfp.pdf Size:220K _cystek

BU941ZT
BU941ZT

Spec. No. : C660FP Issued Date : 2008.05.20 CYStech Electronics Corp. Revised Date : Page No. : 1/5 NPN Epitaxial Planar Transistor BU941ZFP Features •High BVCEO •Low VCE(SAT) •High current capability •Built-in clamping zener •Pb-free package Applications •High ruggedness electronic ignitions Equivalent Circuit Outline BU941ZFP TO-220FP C B E B

4.6. bu941zf3.pdf Size:242K _cystek

BU941ZT
BU941ZT

Spec. No. : C660F3 Issued Date : 2010.10.01 CYStech Electronics Corp. Revised Date : 2014.02.13 Page No. : 1/6 NPN Epitaxial Planar Transistor BU941ZF3 Features •High BVCEO •Low VCE(SAT) •High current capability •Built-in clamping zener •Pb-free lead plating package Applications •High ruggedness electronic ignitions Equivalent Circuit Outline TO-263

4.7. bu941zle3.pdf Size:247K _cystek

BU941ZT
BU941ZT

Spec. No. : C660E3 Issued Date : 2014.01.09 CYStech Electronics Corp. Revised Date : Page No. : 1/6 NPN Epitaxial Planar Transistor BVCEO 350V BU941ZLE3 IC 15A VCESAT(MAX) 1.6V Features •High BVCEO •Low VCE(SAT) •High current capability •Built-in clamping zener •Pb-free lead plating package Applications •High ruggedness electronic ignitions Equivalent

Datasheet: BU941PFI , BU941SM , BU941T , BU941TFI , BU941Z , BU941ZP , BU941ZPFI , BU941ZSM , B772 , BU941ZTFI , BU999 , BUD44D , BUD44D2 , BUD46 , BUD46A , BUD47 , BUD47A .

 


BU941ZT
  BU941ZT
  BU941ZT
 

social 

LIST

Last Update

BJT: EMT3FHA | EMT3 | EMT2FHA | EMT2 | EMT1FHA | EMT1DXV6T5G | EMT1DXV6T1G | EMT18 | EML22 | ECH8503-TL-H | ECH8502-TL-H | E13005D-213 | E13005-250 | E13005-225 | DXTN26070CY | DXTD882 | DXT696BK | DXT5616U | DXT2014P5 | DXT2012P5 |