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BUT100 Specs and Replacement


   Type Designator: BUT100
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 300 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 125 V
   Maximum Collector Current |Ic max|: 50 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3
 

 BUT100 Substitution

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BUT100 detailed specifications

 ..1. Size:64K  st
 but100.pdf pdf_icon

BUT100

BUT100 HIGH POWER NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH RUGGEDNESS APPLICATION MOTOR CONTROL 1 UNINTERRUPTABLE POWER SUPPLY 2 DESCRIPTION The BUT100 is a Multiepitaxial Planar NPN TO-3 Transistor in TO-3 package. It is intended for use (version " S ") in high frequency and efficency ... See More ⇒

 ..2. Size:226K  inchange semiconductor
 but100.pdf pdf_icon

BUT100

isc Silicon NPN Power Transistor BUT100 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 125V(Min.) CEO(SUS) Hight Current Capability Hight Ruggedness Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor Control Uninterruptable Power Supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collec... See More ⇒

Detailed specifications: BUS48P , BUS50 , BUS51 , BUS52 , BUS97 , BUS97A , BUS98 , BUS98A , S9013 , BUT102 , BUT11 , BUT11-5 , BUT11-6 , BUT11-7 , BUT11A , BUT11AF , BUT11AFI .

Keywords - BUT100 transistor specs

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