All Transistors. BUT100 Datasheet

 

BUT100 Datasheet and Replacement


   Type Designator: BUT100
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 300 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 125 V
   Maximum Collector Current |Ic max|: 50 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3
 

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BUT100 Datasheet (PDF)

 ..1. Size:64K  st
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BUT100

BUT100HIGH POWER NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH RUGGEDNESS APPLICATION MOTOR CONTROL1 UNINTERRUPTABLE POWER SUPPLY2DESCRIPTION The BUT100 is a Multiepitaxial Planar NPNTO-3Transistor in TO-3 package. It is intended for use(version " S ")in high frequency and efficency

 ..2. Size:226K  inchange semiconductor
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BUT100

isc Silicon NPN Power Transistor BUT100DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 125V(Min.)CEO(SUS)Hight Current CapabilityHight RuggednessMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor ControlUninterruptable Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: MMBTH10LT1 | 2N6515 | E1617 | PBHV8115Z | KT837G | D38L2 | ECG33

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