All Transistors. C426 Datasheet

 

C426 Datasheet, Equivalent, Cross Reference Search

Type Designator: C426

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Max. Operating Junction Temperature (Tj): 175 ¬įC

Transition Frequency (ft): 80 MHz

Collector Capacitance (Cc): 12 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO5

C426 Transistor Equivalent Substitute - Cross-Reference Search

 

C426 Datasheet (PDF)

1.1. 2sc4269.pdf Size:107K _sanyo

C426
C426

Ordering number:EN2969A NPN Epitaxial Planar Silicon Transistor 2SC4269 VHF Converter, Local Oscillator Applications Features Package Dimensions ∑ High power gain : PG=15dB typ (f=0.4GHz) unit:mm ∑ High cutoff frequency : fT=1.2GHz typ 2018B [2SC4269] 0.4 0.16 3 0~0.1 1 0.95 2 0.95 1.9 2.9 1 : Base 2 : Emitter 3 : Collector SANYO : CP Specifications Absolute Maximum Ratin

1.2. 2sc4265.pdf Size:24K _hitachi

C426
C426

2SC4265 Silicon NPN Epitaxial Application VHF RF amplifier, Local oscillator, Mixer Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4265 Absolute Maximum Ratings (Ta = 25įC) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 100 mW J

 1.3. 2sc4262.pdf Size:24K _hitachi

C426
C426

2SC4262 Silicon NPN Epitaxial Application UHF / VHF Local oscillator Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4262 Absolute Maximum Ratings (Ta = 25įC) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 100 mW Junction tempera

1.4. 2sc4260.pdf Size:24K _hitachi

C426
C426

2SC4260 Silicon NPN Epitaxial Application UHF frequency converter, Wide band amplifier Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4260 Absolute Maximum Ratings (Ta = 25įC) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 13 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 100 mW

 1.5. 2sc4264.pdf Size:24K _hitachi

C426
C426

2SC4264 Silicon NPN Epitaxial Application VHF / UHF RF amplifier, Local oscillator, Mixer Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4264 Absolute Maximum Ratings (Ta = 25įC) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 100

1.6. 2sc4261.pdf Size:24K _hitachi

C426
C426

2SC4261 Silicon NPN Epitaxial Application UHF Local oscillator Outline CMPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC4261 Absolute Maximum Ratings (Ta = 25įC) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 100 mW Junction temperature T

1.7. 2sc4265.pdf Size:139K _inchange_semiconductor

C426
C426

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4265 DESCRIPTION ·Low Noise ·High Gain APPLICATIONS ·Designed for use in VHF RF amplifier, local oscillator, mixer. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 3.0 V IC Collecto

1.8. 2sc4262.pdf Size:96K _inchange_semiconductor

C426
C426

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4262 DESCRIPTION ·Low Noise ·High Gain APPLICATIONS ·Designed for use in UHF~ VHF local oscillator. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Contin

1.9. 2sc4260.pdf Size:220K _inchange_semiconductor

C426
C426

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4260 DESCRIPTION ·Low Noise ·High Gain APPLICATIONS ·Designed for use in UHF frequency converter , wide band amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 13 V VEBO Emitter-Base Voltage 3.0 V IC C

1.10. 2sc4264.pdf Size:134K _inchange_semiconductor

C426
C426

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4264 DESCRIPTION ·Low Noise ·High Gain APPLICATIONS ·Designed for use in UHF ~VHF RF amplifier, local oscillator, mixer. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 11 V VEBO Emitter-Base Voltage 3.0 V IC C

1.11. 2sc4261.pdf Size:210K _inchange_semiconductor

C426
C426

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4261 DESCRIPTION ·Low Noise ·High Gain APPLICATIONS ·Designed for use in UHF local oscillator. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous

1.12. 2sc4269.pdf Size:886K _kexin

C426
C426

ÔĽŅSMD Type Transistors NPN Transistors 2SC4269 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ‚Ė† Features ‚óŹ Collector Current Capability IC=50mA 1 2 ‚óŹ Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ‚Ė† Absolute Maximum Ratings Ta = 25‚ĄÉ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

Datasheet: C3-12 , C3-28 , C400 , C40-28 , C407 , C420 , C424 , C425 , 2N3904 , C428 , C434 , C441 , C442 , C450 , C5 , C50-28 , C5-8 .

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