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CDQ10012 Specs and Replacement

   Type Designator: CDQ10012
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 85 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Collector Current |Ic max|: 0.06 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO5

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