CDQ10014 Specs and Replacement
Type Designator: CDQ10014
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Collector Current |Ic max|: 0.06 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO5
CDQ10014 Transistor Equivalent Substitute - Cross-Reference Search
CDQ10014 detailed specifications
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Detailed specifications: CDQ10006 , CDQ10007 , CDQ10008 , CDQ10009 , CDQ10010 , CDQ10011 , CDQ10012 , CDQ10013 , S9018 , CDQ10015 , CDQ10016 , CDQ10017 , CDQ10018 , CDQ10019 , CDQ10020 , CDQ10021 , CDQ10022 .
Keywords - CDQ10014 transistor specs
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