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CDQ10014 Specs and Replacement


   Type Designator: CDQ10014
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Collector Current |Ic max|: 0.06 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO5

 CDQ10014 Transistor Equivalent Substitute - Cross-Reference Search

   

CDQ10014 detailed specifications

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Detailed specifications: CDQ10006 , CDQ10007 , CDQ10008 , CDQ10009 , CDQ10010 , CDQ10011 , CDQ10012 , CDQ10013 , S9018 , CDQ10015 , CDQ10016 , CDQ10017 , CDQ10018 , CDQ10019 , CDQ10020 , CDQ10021 , CDQ10022 .

Keywords - CDQ10014 transistor specs

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