All Transistors. CJD200 Datasheet

 

CJD200 Datasheet, Equivalent, Cross Reference Search

Type Designator: CJD200

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 12.5 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 65 MHz

Forward Current Transfer Ratio (hFE), MIN: 45

Noise Figure, dB: -

Package: DPAK

CJD200 Transistor Equivalent Substitute - Cross-Reference Search

 

CJD200 Datasheet (PDF)

1.1. cjd200-cjd210.pdf Size:419K _central

CJD200
CJD200

CJD200 NPN CJD210 PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION: COMPLEMENTARY SILICON The CENTRAL SEMICONDUCTOR CJD200, CJD210 POWER TRANSISTORS types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for high current amplifier applications. MARKING: FULL PART NUMBER DPAK TRANSISTOR CASE MAXIMUM RATINGS: (TC=25C unless otherwise note

5.1. cjd204r.pdf Size:193K _cdil

CJD200
CJD200

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON POWER TRANSISTOR CJD204R Pin Configurations:- TO-251 Pin 1 :- Emitter I PAK Plastic Package Pin 2 :- Collector Pin 3 :- Base ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 60 V VCEO Collector Emitter Voltage 60 V VEBO Emitter Base Voltage 5 V

Datasheet: CIL931 , CIL932 , CIL997 , CJD112 , CJD117 , CJD122 , CJD127 , CJD13003 , MPSA42 , CJD210 , CJD2955 , CJD3055 , CJD31C , CJD32C , CJD340 , CJD350 , CJD41C .

 


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