All Transistors. 2N3414 Datasheet

 

2N3414 Datasheet and Replacement


   Type Designator: 2N3414
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.36 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 75
   Noise Figure, dB: -
   Package: TO92
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2N3414 Datasheet (PDF)

 ..1. Size:58K  central
2n3414 2n3415 2n3416 2n3417 mps3414 mps3415 mps3416 mps3417.pdf pdf_icon

2N3414

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 ..2. Size:48K  microelectronics
2n3414.pdf pdf_icon

2N3414

 9.1. Size:304K  fairchild semi
2n3416 2n3417.pdf pdf_icon

2N3414

2N34162N3417B TO-92CENPN General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 300 mA. Sourcedfrom Process 10. See PN100A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 50 VVCBO Collector-Base Voltage 50 V

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2N5715 | PUMZ1 | 2SC3419O | 2SC1811-1 | 3DD5G | 2N811 | DTL1642

Keywords - 2N3414 transistor datasheet

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