All Transistors. D40N1 Datasheet

 

D40N1 Datasheet, Equivalent, Cross Reference Search

Type Designator: D40N1

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 6.5 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO202

D40N1 Transistor Equivalent Substitute - Cross-Reference Search

 

D40N1 Datasheet (PDF)

1.1. sqd40n10-25.pdf Size:154K _vishay

D40N1
D40N1

1.2. sud40n10.pdf Size:140K _vishay

D40N1
D40N1

 1.3. ssd40n10-30d.pdf Size:2414K _secos

D40N1
D40N1

SSD40N10-30D 26A, 100V, RDS(ON) 36m? N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free FEATURES TO-252(D-Pack) Low RDS(on) trench technology. Low thermal impedance. Fast switching speed. APPLICATION PoE Power Sourcing Equipment. A C B PoE Powered Devices. D Telecom DC/DC converters.

1.4. ceu40n10 ced40n10.pdf Size:405K _cet

D40N1
D40N1

CED40N10/CEU40N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 37A, RDS(ON) = 32m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwis

Datasheet: D40E5 , D40E5-6 , D40E6 , D40E7 , D40K1 , D40K2 , D40K3 , D40K4 , C103 , D40N2 , D40N3 , D40N4 , D40N5 , D40NU1 , D40NU2 , D40NU3 , D40NU4 .

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