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DTS1010 Specs and Replacement


   Type Designator: DTS1010
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 140 °C
   Transition Frequency (ft): 12 MHz
   Forward Current Transfer Ratio (hFE), MIN: 500
   Noise Figure, dB: -
   Package: TO3
 

 DTS1010 Substitution

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DTS1010 detailed specifications

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Detailed specifications: DTL8753 , DTL8754 , DTL8755 , DTN1006 , DTN9000 , DTN9000T , DTN9001 , DTN9001T , 2SD718 , DTS1020 , DTS103 , DTS105 , DTS106 , DTS107 , DTS108 , DTS2000 , DTS2001 .

History: MBT6429DW1 | 2N4902

Keywords - DTS1010 transistor specs

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