All Transistors. FMMT5179 Datasheet

 

FMMT5179 Datasheet, Equivalent, Cross Reference Search

Type Designator: FMMT5179

SMD Transistor Code: 179

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 2 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 900 MHz

Collector Capacitance (Cc): 1 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO236

FMMT5179 Transistor Equivalent Substitute - Cross-Reference Search

 

FMMT5179 Datasheet (PDF)

5.1. fmmt591csm.pdf Size:11K _upd

FMMT5179

FMMT591CSM Dimensions in mm (inches). Bipolar PNP Device in a 0.51 ± 0.10 Hermetically sealed LCC1 (0.02 ± 0.004) 0.31 rad. (0.012) Ceramic Surface Mount 3 Package for High Reliability Applications 21 1.91 ± 0.10 (0.075 ± 0.004) A 0.31 rad. Bipolar PNP Device. (0.012) 3.05 ± 0.13 (0.12 ± 0.005) 1.40 (0.055) 1.02 ± 0.10 max. VCEO = 80V A = (0.04 ± 0.00

5.2. fmmt591dcsm.pdf Size:10K _upd

FMMT5179

FMMT591DCSM Dimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 ± 0.15 2.29 ± 0.20 1.65 ± 0.13 (0.055 ± 0.006) (0.09 ± 0.008) (0.065 ± 0.005) Applications 2 3 1 4 Dual Bipolar PNP Devices. A 0.23 6 5 rad. (0.009) V = 80V CEO 6.22 ± 0.13 A = 1.27 ± 0.13 I = 1A C (0.05

 5.3. fmmt560q.pdf Size:467K _upd

FMMT5179
FMMT5179

A Product Line of Diodes Incorporated FMMT560 500V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data  BVCEO > -500V  Case: SOT23  IC = -150mA high Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0  ICM Up to 500mA Peak Pulse Current  Moisture Sensitivity: Level 1 per

5.4. fmmt549.pdf Size:135K _fairchild_semi

FMMT5179
FMMT5179

August 2009 FMMT549 PNP Low Saturation Transistor Features ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Sourced from process PB. 3 2 SuperSOT-23 1 Marking : 549 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Unit VCEO Collector-Emitter Vol

 5.5. fmmt591.pdf Size:292K _diodes

FMMT5179
FMMT5179

FMMT591 Medium power PNP transistor in SOT23 Summary BVCEO > -60V BVEBO > -7V IC(cont) = -1A PD = 500mW RCE(sat) = 295m at 1A Complementary part number : FMMT491 Description C Medium power planar PNP bipolar transistor. Features B VCE(sat) maximum specification reduction Reverse blocking specification improvement E Applications E MOSFET gate driving Power switches C

5.6. fmmt555.pdf Size:65K _diodes

FMMT5179
FMMT5179

SOT23 PNP SILICON PLANAR FMMT555 MEDIUM POWER TRANSISTOR ISSUE 4 AUGUST 2003 FEATURES * 150 Volt VCEO * 1 Amp continuous current E C =IB2=IC/10 COMPLEMENTARY TYPE FMMT455 tf ns B 1000 PARTMARKING DETAIL 555 800 600 td ns SOT23 ABSOLUTE MAXIMUM RATINGS. 400 100 PARAMETER SYMBOL VALUE UNIT 200 50 0 0 Collector-Base Voltage VCBO -160 V -1 Collector-Emitter Voltage VCE

5.7. fmmt593.pdf Size:119K _diodes

FMMT5179
FMMT5179

SOT SI I O A A T HI H O TA T A SISTO ISS O T T T T I D T I A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V I I i II I I Di i i T i T T T T I A HA A T ISTI S a Ta T I IT DITI II V I V V I II i V I V V I i V I V V I II I V V i I V V II i I V V i i V V I I V I V I I V V I I i T V I V V I V V i T i I V V I V V

5.8. fmmt5087.pdf Size:26K _diodes

FMMT5179

SOT SI I O A A T 08 S A SI A T A SISTO T I D T I T 8 T 8 T T T 88 A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I IT DITI II I V V I V V I i I V V I II i V V I I i V I i V 8 V I V V V I i 8 I V V T I V V i I V V T i i I V V T II i I I V V T i i i I V

5.9. fmmt558.pdf Size:121K _diodes

FMMT5179
FMMT5179

SOT SI I O A A T 8 HI H O TA T A SISTO ISS A A Y 6 T II i i I i I T T T 8 T I D T I 8 A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V I I i II I I Di i i i T T T T I A HA A T ISTI S a Ta T I IT DITI II V V I V I II i V V I V I i V I V V I II I I V V V V i I V V V II i i V V I I V I V I I i V V I I i V I

5.10. fmmt560.pdf Size:480K _diodes

FMMT5179
FMMT5179

A Product Line of Diodes Incorporated FMMT560 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR Features Mechanical Data Excellent hFE Characteristics up to IC = 50mA Case: SOT-23 Case Material: Molded Plastic, Green Molding Compound. Low Saturation Voltages UL Flammability Classification Rating 94V-0 Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) Moisture Sensitivi

5.11. fmmt5400 fmmt5401.pdf Size:26K _diodes

FMMT5179

SOT SI I O A A T 00 HI H O TA T A SISTO S T 0 ISS O 6 T I D T I T T T T T T T T A SO T A I ATI S T T T IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T T T I I IT DITI II V V I V I II i V V I V I i V V I V I II I V V V V T V V V V T i I V V T 8 I V V i I V V

5.12. fmmt5209 fmmt5210.pdf Size:27K _diodes

FMMT5179

SOT23 NPN SILICON PLANAR FMMT5209 SMALL SIGNAL TRANSISTORS FMMT5210 ISSUE 2 - JULY 1995 T I D T I T E C T B SOT23 ABSOLUTE MAXIMUM RATINGS. T T T IT II V I V V II i V I V V i V I V V i II I Di i i i T T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T T T IT DITI I I II I V V I i I V V I II i V V I I i V I i V

5.13. fmmt5550 fmmt5551.pdf Size:27K _diodes

FMMT5179

SOT SI I O A A T 0 HI H O TA T A SISTO S T ISS O 6 T I D T I T T T T T T T T A SO T A I ATI S T T T IT II V I V 8 V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T T T I I IT DITI II V 8 V I V I II i V V I V I i V V I V I II I V V V V T V V V V T i 8 I V V T 8 I V V i I V V

5.14. fmmt591a.pdf Size:149K _diodes

FMMT5179
FMMT5179

A Product Line of Diodes Incorporated FMMT591A SOT23 PNP silicon planar medium power transistor Features Low equivalent on resistance RCE(sat) = 350m at 1A Part Marking Detail -91A Complementary type -FMMT491A Absolute maximum ratings. Parameter Symbol Value Unit Collector-Base voltage VCBO -40 V Collector-Emitter voltage VCEO -40 V Emitter-Base voltage VEBO -5 V Peak pulse curren

5.15. fmmt5088 fmmt5089.pdf Size:27K _diodes

FMMT5179

SOT SI I O A A T 088 S A SI A T A SISTO S T 08 ISS S T T I D T I T 88 T 8 T T T 88 T 8 T 8 iI I A SO T A I ATI S T T 88 T 8 IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T 88 T 8 T I I IT DITI II V V I I V I II i V V I I V I II I V V I V V I i I V V I V V I i i V V V I I I V 8

5.16. fmmt591.pdf Size:429K _htsemi

FMMT5179
FMMT5179

FMMT591 TRANSISTOR (PNP) SOT-23 FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER Marking :591 3. COLLECTOR MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A PC Collector Power Dissipation 500 mW

5.17. fmmt593.pdf Size:442K _htsemi

FMMT5179

FMMT593 TRANSISTOR (PNP) SOT–23 FEATURES ? Complementary Type FMMT493 MARKING:593 1. BASE MAXIMUM RATINGS (Ta=25? unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage -120 V CBO V Collector-Emitter Voltage -100 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -1 A C PC Collector Power Dissipation 250 mW

5.18. fmmt591.pdf Size:187K _lge

FMMT5179
FMMT5179

FMMT591 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low equivalent on-resistance Marking :591 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous

5.19. fmmt591.pdf Size:219K _wietron

FMMT5179
FMMT5179

FMMT591 COLLECTOR 3 General Purpose Transistor PNP Silicon 3 P b Lead(Pb)-Free 1 1 BASE 2 SOT-23 2 EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Base Breakdown Voltage V(BR)CEO -60 V Collector-Emitter Breakdown Voltage V(BR)CBO -80 V Emitter-Base Breakdown Voltage V(BR)EBO V -5.0 Collector Current IC A -1.0 Peak Pulse Current ICm A -2.0 Power Dissipation

5.20. fmmt593.pdf Size:267K _wietron

FMMT5179
FMMT5179

FMMT593 COLLECTOR 3 General Purpose Transistor PNP Silicon 3 P b Lead(Pb)-Free 1 1 BASE 2 SOT-23 2 EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Base Breakdown Voltage V(BR)CEO -120 V Collector-Emitter Breakdown Voltage V(BR)CBO -100 V Emitter-Base Breakdown Voltage V(BR)EBO V -5.0 Collector Current IC A -1.0 Power Dissipation PD mW 250 TA=25°C Junctio

5.21. fmmt560.pdf Size:1033K _kexin

FMMT5179
FMMT5179

SMD Type Transistors PNP Transistors FMMT560 (KMMT560) SOT-23 Unit: mm ■ Features +0.1 2.9 -0.1 +0.1 ●Collector Current Capability IC=-150mA 0.4 -0.1 3 ●Collector Emitter Voltage VCEO=-500V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO

Datasheet: FMMT5137 , FMMT5138 , FMMT5139 , FMMT5140 , FMMT5141 , FMMT5142 , FMMT5143 , FMMT5172 , BC237 , FMMT5209 , FMMT5210 , FMMT5400 , FMMT5400R , FMMT5401 , FMMT5401R , FMMT5447 , FMMT5449 .

Back to Top

 


FMMT5179
  FMMT5179
  FMMT5179
 

social 

LIST

Last Update

BJT: US6H23 | UMH9NFHA | UMH8NFHA | UMH6NFHA | UMH5NFHA | UMH4NFHA | UMH3NFHA | UMH33N | UMH32N | UMH2NFHA | UMH1NFHA | UMH14NFHA | UMH14N | UMH11NFHA | UMH10NFHA | UMD9NFHA | UMD6NFHA | UMD5N | UMD4N | UMD3NFHA |