All Transistors. FPC1318 Datasheet

 

FPC1318 Datasheet and Replacement


   Type Designator: FPC1318
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 15 pF
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: TO92
 

 FPC1318 Substitution

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FPC1318 Datasheet (PDF)

 9.1. Size:509K  jiaensemi
 jfpc13n65ci.pdf pdf_icon

FPC1318

JFPC13N65CI 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 650V, RDS(on)typ. = 0.71@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withs

 9.2. Size:923K  jiaensemi
 jfpc13n65c jffc13n65c.pdf pdf_icon

FPC1318

JFPC13N65C JFFC13N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 650V, RDS(on)typ. = 0.55@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performan

 9.3. Size:507K  jiaensemi
 jfpc13n60ci.pdf pdf_icon

FPC1318

JFPC13N60CI 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 600V, RDS(on)typ. = 0.65@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withs

 9.4. Size:692K  jiaensemi
 jfpc13n50c jffm13n50c.pdf pdf_icon

FPC1318

JFPC13N50C JFFM13N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 500V, RDS(on)typ. = 380m@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

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Datasheet: FP57104 , FP57204 , FPA683 , FPA684 , FPA719 , FPA720 , FPA733 , FPC1317 , 2N3055 , FPC1383 , FPC1384 , FPC1675 , FPC644 , FPC828 , FPC828A , FPC829 , FPC900 .

Keywords - FPC1318 transistor datasheet

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