IMB17A Specs and Replacement
Type Designator: IMB17A
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN: 33
Noise Figure, dB: -
Package: SO6
IMB17A Transistor Equivalent Substitute - Cross-Reference Search
IMB17A detailed specifications
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Detailed specifications: IDI8001 , IDI8002 , IDI8003 , IDI8004 , IDI8005 , IMB10A , IMB11A , IMB16 , D209L , IMB1A , IMB2A , IMB3A , IMB4A , IMB5A , IMB6A , IMB7A , IMB8A .
Keywords - IMB17A transistor specs
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