IMB3A Specs and Replacement
Type Designator: IMB3A
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SO6
IMB3A Transistor Equivalent Substitute - Cross-Reference Search
IMB3A detailed specifications
emb3 umb3n imb3a umb3n.pdf
EMB3 / UMB3N / IMB3A Transistors General purpose (dual digital transistors) EMB3 / UMB3N / IMB3A External dimensions (Unit mm) Features 1) Two DTA143T chips in a EMT6 or UMT6 or SMT6 EMB3 1.6 0.5 package. 1.0 0.5 0.5 2) Mounting possible with EMT3 or UMT3 or SMT3 (6) (5) (4) automatic mounting machines. 1pin mark ( ) ( ) ( ) 1 2 3 3) Transistor elements are indep... See More ⇒
umb3n imb3a b3 sot363 sot23-6.pdf
Transistors General purpose (dual digital transistors) UMB3N / IMB3A FFeatures FExternal dimensions (Units mm) 1) Two DTA143T chips in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting ma- chines. 3) Transistor elements are indepen- dent, eliminating interference. FStructure Dual PNP digital transistor (each with single built in resistor) The follow... See More ⇒
emb3fha umb3nfha imb3afra.pdf
EMB3FHA / UMB3NFHA / IMB3AFRA EMB3 / UMB3N / IMB3A Datasheet PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) (5) VCEO -50V (4) (4) (1) (1) (2) IC(MAX.) (2) -100mA (3) (3) R1 4.7kW EMB3 UMB3N EMB3FHA UMB3NFHA (SC-107C) SOT-353 (SC-88) SMT6 (4)... See More ⇒
Detailed specifications: IDI8004 , IDI8005 , IMB10A , IMB11A , IMB16 , IMB17A , IMB1A , IMB2A , 2SC5198 , IMB4A , IMB5A , IMB6A , IMB7A , IMB8A , IMB9A , IMBT3903 , IMBT3904 .
Keywords - IMB3A transistor specs
IMB3A cross reference
IMB3A equivalent finder
IMB3A lookup
IMB3A substitution
IMB3A replacement
