IMH1A Datasheet, Equivalent, Cross Reference Search
Type Designator: IMH1A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN: 56
Noise Figure, dB: -
Package: SO6
IMH1A Transistor Equivalent Substitute - Cross-Reference Search
IMH1A Datasheet (PDF)
umh1n imh1a h1 sot363 sot23-6.pdf
UMG1N / UMH1N / UMH5N / FMG1A / IMH1A / IMH5ATransistorsGeneral purpose (dual digital transistors)UMG1N / UMH1N / UMH5N / FMG1A / IMH1A / IMH5A External dimensions (Units : mm) Features1) Two DTA124E chips in a UMT or SMT package.UMG1N1.25 Absolute maximum ratings (Ta = 25C)2.1Parameter Symbol Limits UnitSupply voltage VCC 50 V0.1Min.40ROHM : UMT5Input voltage
emh1 umh1n imh1a.pdf
EMH1 / UMH1N / IMH1A Transistors General purpose (dual digital transistors) EMH1 / UMH1N / IMH1A External dimensions (Unit : mm) Features 1) Two DTC124E chips in a EMT or UMT or SMT UMH1N package. 1.25 Circuit schematic 2.1EMH1 / UMH1N IMH1A(3) (2) (1) (4) (5) (6) 0.1Min.R1 R2 R1 R2ROHM : UMT6 Each lead has same dimensionsEIAJ : SC-88R2 R2R1 R1(4) (5) (6)
emh1fha umh1nfha imh1afra.pdf
EMH1FHA / UMH1NFHA / IMH1AFRAEMH1 / UMH1N / IMH1ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R122kWEMH1 UMH1NEMH1FHA UMH1NFHAR2(SC-107C) 22kW SOT-353 (SC-88) SMT6(
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
