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IR4025 Specs and Replacement


   Type Designator: IR4025
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: TO3

 IR4025 Transistor Equivalent Substitute - Cross-Reference Search

   

IR4025 detailed specifications

 9.1. Size:321K  vishay
 sir402dp.pdf pdf_icon

IR4025

SiR402DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.006 at VGS = 10 V TrenchFET Power MOSFET 35 30 12 nC 100 % Rg Tested 0.008 at VGS = 4.5 V 35 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK SO-8 APPLICATIONS S ... See More ⇒

Detailed specifications: IR2002 , IR2500 , IR2501 , IR2700 , IR2701 , IR3000 , IR3001 , IR4010 , BC327 , IR4026 , IR4039 , IR4040 , IR4041 , IR4045 , IR4046 , IR4047 , IR4050 .

History: ACY11 | ACY14

Keywords - IR4025 transistor specs

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