All Transistors. IR900 Equivalents Search

 

IR900 Specs and Replacement

   Type Designator: IR900
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 90 W
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO3

 IR900 Transistor Equivalent Substitute - Cross-Reference Search