All Transistors. KSB1151 Datasheet

 

KSB1151 Datasheet, Equivalent, Cross Reference Search

Type Designator: KSB1151

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO126

KSB1151 Transistor Equivalent Substitute - Cross-Reference Search

 

KSB1151 Datasheet (PDF)

1.1. ksb1151.pdf Size:50K _fairchild_semi

KSB1151
KSB1151

KSB1151 Feature Low Collector-Emitter Saturation Voltage Large Collector Current High Power Dissipation : PC=1.3W (Ta=25C) Complement to KSD 1691 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage - 60 V

5.1. ksb1149.pdf Size:46K _fairchild_semi

KSB1151
KSB1151

KSB1149 Low Collector Saturation Voltage Built-in Damper Diode at E-C High DC Current Gain High Power Dissipation : PC=1.3W (Ta=25C) TO-126 1 1. Emitter 2.Collector 3.Base PNP Silicon Darlington Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 100 V VCEO Collector-Emitter Voltage - 100 V VEBO Emitter

5.2. ksb1121.pdf Size:430K _fairchild_semi

KSB1151
KSB1151

July 2005 KSB1121 PNP Epitaxial Planar Silicon Transistor High Current Driver Applications Low Collector-Emitter Saturation Voltage Large Current Capacity Fast Switching Speed Complement to KSD1621 Marking 1 1 2 1 P Y W W SOT-89 1 Weekly code 1. Base 2. Collector 3. Emitter Year code hFE grage Absolute Maximum Ratings Ta = 25C unless otherwise noted Symbol Parameter Rati

5.3. ksb1116 a.pdf Size:52K _fairchild_semi

KSB1151
KSB1151

KSB1116/1116A Audio Frequency Power Amplifier & Medium Speed Switching Complement to KSD1616/1616A TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage : KSB1116 -60 V : KSB1116A -80 V VCEO Collector-Emitter Voltage : KSB1116 -50 V : KSB1116A -60

5.4. ksb1116s.pdf Size:52K _fairchild_semi

KSB1151
KSB1151

KSB1116S Audio Frequency Power Amplifier & Medium Speed Switching TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current (DC) -1 A ICP * Collector Current (P

Datasheet: KSB1121S , KSB1121T , KSB1121U , KSB1149 , KSB1149O , KSB1149R , KSB1149Y , KSB1150 , TIP41C , KSB1151G , KSB1151O , KSB1151Y , KSB1330 , KSB1366 , KSB1366G , KSB1366Y , KSB546 .

 


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