All Transistors. KSR1105 Datasheet

 

KSR1105 Datasheet, Equivalent, Cross Reference Search

Type Designator: KSR1105

SMD Transistor Code: R05

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in bias resistor R1 = 4.7 kOhm

Built in bias resistor R2 = 10 kOhm

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 3.7 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SOT23

KSR1105 Transistor Equivalent Substitute - Cross-Reference Search

 

KSR1105 Datasheet (PDF)

1.1. ksr1105.pdf Size:53K _upd

KSR1105
KSR1105

KSR1105 Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit 3 • Built in bias Resistor (R1 =4.7KΩ, R2=10KΩ) • Complement to KSR2105 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R05 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25°C unless otherwise noted

4.1. ksr1107.pdf Size:54K _upd

KSR1105
KSR1105

KSR1107 Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit 3 • Built in bias Resistor (R1 =22KΩ, R2=47KΩ) • Complement to KSR2107 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R07 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25°C unless otherwise noted

4.2. ksr1101.pdf Size:68K _upd

KSR1105
KSR1105



 4.3. ksr1106.pdf Size:68K _upd

KSR1105
KSR1105



4.4. ksr1104.pdf Size:52K _upd

KSR1105
KSR1105

KSR1104 Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit 3 • Built in bias Resistor (R1 =47KΩ, R2=47KΩ) • Complement to KSR2104 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R04 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25°C unless otherwise noted

 4.5. ksr1109.pdf Size:49K _upd

KSR1105
KSR1105

KSR1109 Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit 3 • Built in bias Resistor (R=4.7KΩ) • Complement to KSR2109 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R09 R B NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter

4.6. ksr1108.pdf Size:67K _upd

KSR1105
KSR1105



4.7. ksr1102.pdf Size:67K _upd

KSR1105
KSR1105



Datasheet: KSR1008 , KSR1009 , KSR1010 , KSR1011 , KSR1012 , KSR1101 , KSR1102 , KSR1104 , 2N60C , KSR1106 , KSR1107 , KSR1108 , KSR1109 , KSR1110 , KSR1111 , KSR1112 , KSR1113 .

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