All Transistors. MJE18006 Datasheet

 

MJE18006 Datasheet, Equivalent, Cross Reference Search

Type Designator: MJE18006

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 1000 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 ¬įC

Transition Frequency (ft): 14 MHz

Collector Capacitance (Cc): 120 pF

Forward Current Transfer Ratio (hFE), MIN: 14

Noise Figure, dB: -

Package: TO220

MJE18006 Transistor Equivalent Substitute - Cross-Reference Search

 

MJE18006 Datasheet (PDF)

1.1. mje18006.pdf Size:415K _motorola

MJE18006
MJE18006

Order this document MOTOROLA by MJE18006/D SEMICONDUCTOR TECHNICAL DATA * MJE18006 Designer's? Data Sheet * MJF18006 SWITCHMODE? *Motorola Preferred Device NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 6.0 AMPERES The MJE/MJF18006 have an applications specific stateĖofĖtheĖart die designed 1000 VOLTS for use in 220 V lineĖoperated Switchmode

1.2. mje18006-d.pdf Size:202K _onsemi

MJE18006
MJE18006

MJE18006G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18006G has an applications specific state-of-the-art die http://onsemi.com designed for use in 220 V line-operated SWITCHMODE Power supplies and electronic light ballasts. POWER TRANSISTOR Features 6.0 AMPERES ē Improved Efficiency Due to Low Base Drive Requirements: 1000 VOLTS - 100 WATTS

 1.3. mje18006.pdf Size:95K _jmnic

MJE18006
MJE18006

Product Specification www.jmnic.com Silicon NPN Power Transistors MJE18006 DESCRIPTION · ·With TO-220C package ·High voltage ,high speed ·Improved efficiency due to low base drive requirements: -High and flat DC current gain hFE -Fast switching APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. PINNING PIN D

1.4. mje18006.pdf Size:120K _inchange_semiconductor

MJE18006
MJE18006

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE18006 DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Ў¤ Absolute maximum ratings(Tc=25

Datasheet: MJE1660 , MJE1661 , MJE170 , MJE171 , MJE172 , MJE180 , MJE18002 , MJE18004 , S9018 , MJE18008 , MJE181 , MJE182 , MJE1909 , MJE200 , MJE201 , MJE2010 , MJE2011 .

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