All Transistors. 2N5156 Datasheet

 

2N5156 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N5156

Material of Transistor: Ge

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 93 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 60 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 100 °C

Transition Frequency (ft): 0.15 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO3

2N5156 Transistor Equivalent Substitute - Cross-Reference Search

 

2N5156 Datasheet (PDF)

5.1. 2n5152smd.pdf Size:10K _upd

2N5156

2N5152SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 80V IC = 5A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0

5.2. 2n5153hr.pdf Size:577K _upd

2N5156
2N5156

2N5153HR Hi-Rel PNP bipolar transistor 80 V, 5 A Datasheet - production data Features 1 3 2 Parameter Value TO-257 VCEO 80 V TO-39 IC (max.) 5 A 2 hFE at 10 V -150 mA > 70 1 3 Operating temperature -65 °C to +200 °C range SMD.5 • Hi-Rel PNP bipolar transistor • Linear gain characteristics Figure 1. Internal schematic diagram • ESCC qualified • European preferr

 5.3. 2n5151-220m.pdf Size:21K _upd

2N5156
2N5156

2N5151-220M 2N5153-220M MECHANICAL DATA Dimensions in mm (inches) 4.70 HIGH SPEED 5.00 10.41 0.70 10.67 MEDIUM VOLTAGE 0.90 SWITCHES 3.56 Dia. 3.81 DESCRIPTION 1 2 3 The 2N5151-220M and the 2N5153-220M are silicon expitaxial planar PNP transistors in TO-220 (JEDEC TO-257AB) metal case intended for use in switching applications. The complementary NPN types are the 0.89 2

5.4. 2n5152a.pdf Size:11K _upd

2N5156

2N5152A Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

 5.5. 2n5153smd05.pdf Size:27K _upd

2N5156
2N5156

2N5151SMD05 2N5153SMD05 MECHANICAL DATA PNP BIPOLAR TRANSISTOR IN A Dimensions in mm (inches) CERAMIC SURFACE MOUNT PACKAGE FOR HIGH-REL AND SPACE APPLICATIONS DESCRIPTION ! The 2N5151SMD05 and the 2N5153SMD05 are silicon expitaxial planar PNP transistors in a Ceramic S

5.6. 2n5154t2a.pdf Size:111K _upd

2N5156
2N5156

SILICON EPITAXIAL NPN TRANSISTOR 2N5154T2A • Hermetic Metal TO39 Package • High Reliability and Space Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage (IE = 0) 100V VCEO Collector – Emitter Voltage (IB = 0) 80V VEBO Emitter – Base Voltage 5.5V IC Continuous Collector Current 2A ICM Pea

5.7. 2n5151smd05.pdf Size:27K _upd

2N5156
2N5156

2N5151SMD05 2N5153SMD05 MECHANICAL DATA PNP BIPOLAR TRANSISTOR IN A Dimensions in mm (inches) CERAMIC SURFACE MOUNT PACKAGE FOR HIGH-REL AND SPACE APPLICATIONS DESCRIPTION ! The 2N5151SMD05 and the 2N5153SMD05 are silicon expitaxial planar PNP transistors in a Ceramic S

5.8. 2n5151u3.pdf Size:184K _upd

2N5156
2N5156

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 DEVICES LEVELS JAN 2N5151 2N5153 JANTX 2N5151L 2N5153L JANTXV 2N5151U3 2N5153U3 JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Te

5.9. 2n5154smd05.pdf Size:26K _upd

2N5156
2N5156

2N5152SMD05 2N5154SMD05 MECHANICAL DATA NPN BIPOLAR TRANSISTOR IN A Dimensions in mm (inches) CERAMIC SURFACE MOUNT PACKAGE FOR HIGH-REL AND SPACE APPLICATIONS DESCRIPTION ! The 2N5152SMD05 and the 2N5154SMD05 are silicon expitaxial planar NPN transistors in a Ceramic S

5.10. 2n5154u3.pdf Size:46K _upd

2N5156
2N5156

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DEVICES LEVELS JAN 2N5152 2N5154 JANTX 2N5152L 2N5154L JANTXV 2N5152U3 2N5154U3 JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test

5.11. 2n5154x-220m.pdf Size:779K _upd

2N5156
2N5156

SILICON NPN POWER TRANSISTOR 2N5154X-220M • Hermetic TO220 Isolated Metal Package • Ideally suited for Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage (IE = 0) 100V VCEO Collector – Emitter Voltage (IB = 0) 80V VEBO Emitter – Base

5.12. 2n5153smd.pdf Size:10K _upd

2N5156

2N5153SMD Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar PNP Device. 2 VCEO = 80V IC = 5A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0

5.13. 2n5154xx.pdf Size:17K _upd

2N5156
2N5156

2N5154XX MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) HIGH SPEED 6.10 (0.240) 6.60 (0.260) MEDIUM VOLTAGE SWITCH 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 2 (0.100) 1 3 DESCRIPTION 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) The 2N5154XX is a silicon expitaxial

5.14. 2n5153u3.pdf Size:184K _upd

2N5156
2N5156

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/545 DEVICES LEVELS JAN 2N5151 2N5153 JANTX 2N5151L 2N5153L JANTXV 2N5151U3 2N5153U3 JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Te

5.15. 2n5154n2a.pdf Size:279K _upd

2N5156
2N5156

SILICON EPITAXIAL NPN TRANSISTOR 2N5154N2A • Hermetic Ceramic Surface Mount SMD1 Package • High Reliability and Space Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage (IE = 0) 100V VCEO Collector – Emitter Voltage (IB = 0) 80V VEBO Emitter – Base Voltage 5.5V IC Continuous Collector Curren

5.16. 2n5154n1b.pdf Size:336K _upd

2N5156
2N5156

SILICON EPITAXIAL NPN TRANSISTOR 2N5154N1B • Hermetic Ceramic Surface Mount SMD0.5 Package • High Reliability and Space Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage (IE = 0) 100V VCEO Collector – Emitter Voltage (IB = 0) 80V VEBO Emitter – Base Voltage 5.5V IC Continuous Collector Curr

5.17. 2n5154hr.pdf Size:612K _upd

2N5156
2N5156

2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features BVCEO 80 V 1 3 IC (max) 5 A 2 HFE at 10 V - 150 mA > 70 TO-39 TO-257 Operating temperature range - 65 °C to + 200 °C 2 1 3 • Hi-Rel NPN bipolar transistor • Linear gain characteristics SMD.5 • ESCC qualified • European preferred part list - EPPL Figure 1. Internal schematic diagr

5.18. 2n5154xsmd.pdf Size:19K _upd

2N5156
2N5156

2N5154XSMD MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED MEDIUM VOLTAGE SWITCH DESCRIPTION The 2N5154XSMD is a silicon expitaxial planar NPN transistors in a Ceramic Surface Mount Package for use in Switching and Linear applications.

5.19. 2n5154xsmd05.pdf Size:17K _upd

2N5156
2N5156

2N5154XSMD05 MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED 7.54 (0.296) 0.76 (0.030) MEDIUM VOLTAGE min. 3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max. SWITCH 0.127 (0.005) 1 3 2 DESCRIPTION 0.127 (0.005) The 2N5154XSMD05 is a silicon expitaxial 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) planar NPN transistors in a Ceramic Surface max. 7.26 (0.286) Mount

5.20. 2n5151xsmd05.pdf Size:19K _upd

2N5156
2N5156

MECHANICAL DATA PNP BIPOLAR TRANSISTOR IN A Dimensions in mm (inches) CERAMIC SURFACE MOUNT 7.54 (0.296) PACKAGE FOR HIGH-REL AND 0.76 (0.030) min. 3.175 (0.125) SPACE APPLICATIONS 2.41 (0.095) 2.41 (0.095) Max. 0.127 (0.005) 1 3 DESCRIPTION 2 The 2N5151XSMD05 is a silicon expitaxial planar PNP transistor in a Ceramic Surface Mount Package for use in Switching and 0.127 (

5.21. 2n5152smd05.pdf Size:26K _upd

2N5156
2N5156

2N5152SMD05 2N5154SMD05 MECHANICAL DATA NPN BIPOLAR TRANSISTOR IN A Dimensions in mm (inches) CERAMIC SURFACE MOUNT PACKAGE FOR HIGH-REL AND SPACE APPLICATIONS DESCRIPTION ! The 2N5152SMD05 and the 2N5154SMD05 are silicon expitaxial planar NPN transistors in a Ceramic S

5.22. 2n5152u3.pdf Size:46K _upd

2N5156
2N5156

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DEVICES LEVELS JAN 2N5152 2N5154 JANTX 2N5152L 2N5154L JANTXV 2N5152U3 2N5154U3 JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test

5.23. 2n5157t1.pdf Size:811K _upd

2N5156
2N5156

The documentation and process conversion measures necessary to comply with this document INCH-POUND shall be completed by 13 February 2014. MIL-PRF-19500/371H 13 December 2013 SUPERSEDING MIL-PRF-19500/371G 28 January 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER, TYPES 2N3902, 2N3902T1, 2N3902T3, 2N5157, 2N5157T1, AND

5.24. 2n5154x.pdf Size:10K _upd

2N5156

2N5154X Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

5.25. 2n5157t3.pdf Size:811K _upd

2N5156
2N5156

The documentation and process conversion measures necessary to comply with this document INCH-POUND shall be completed by 13 February 2014. MIL-PRF-19500/371H 13 December 2013 SUPERSEDING MIL-PRF-19500/371G 28 January 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER, TYPES 2N3902, 2N3902T1, 2N3902T3, 2N5157, 2N5157T1, AND

5.26. 2n5151 2n5152 2n5153 2n5154.pdf Size:78K _central

2N5156

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

5.27. 2n5150.pdf Size:11K _semelab

2N5156

2N5150 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 2A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can

5.28. 2n5152 2n5154.pdf Size:24K _semelab

2N5156
2N5156

2N5152 2N5154 MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED MEDIUM VOLTAGE SWITCHES DESCRIPTION ! The 2N5152 and the 2N5154 are silicon expitaxial planar NPN transistors in jedec

5.29. 2n5151 2n5153.pdf Size:20K _semelab

2N5156
2N5156

2N5151 2N5153 MECHANICAL DATA HIGH SPEED Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) MEDIUM VOLTAGE 7.75 (0.305) 8.51 (0.335) SWITCHES 4.19 (0.165) 4.95 (0.195) DESCRIPTION 0.89 max. (0.035) 12.70 The 2N5151 and the 2N5153 are silicon (0.500) 7.75 (0.305) min. 8.51 (0.335) expitaxial planar PNP transistors in dia. jedec TO-39 metal case intended for use in switchin

5.30. 2n5157.pdf Size:39K _jmnic

2N5156
2N5156

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5157 DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·Switching regulator ·Inverters ·Solenoid and relay drivers ·Motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol MAXIMUN RATINGS(Ta=25?) SYMBOL PARAMET

5.31. 2n5157.pdf Size:116K _inchange_semiconductor

2N5156
2N5156

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5157 DESCRIPTION Ў¤ With TO-3 package Ў¤ High breakdown voltage APPLICATIONS Ў¤ Switching regulator Ў¤ Inverters Ў¤ Solenoid and relay drivers Ў¤ Motor controls PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(T

5.32. 2n5151 2n5151l 2n5153 2n5153l.pdf Size:229K _aeroflex

2N5156
2N5156

PNP Power Silicon Transistor 2N5151, 2N5151L & 2N5153, 2N5153L Features • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/545 • TO-5 Package: 2N5151L, 2N5153L TO-39 (TO-205AD) Package: 2N5151, 2N5153 Maximum Ratings (TC = +25°C unless otherwise noted) Ratings Symbol Value Units Collector - Emitter Voltage VCEO 80 Vdc Collector - Base V

5.33. 2n5152 2n5152l 2n5154 2n5154l.pdf Size:229K _aeroflex

2N5156
2N5156

NPN Power Silicon Transistor 2N5152, 2N5152L & 2N5154, 2N5154L Features • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/544 • TO-5 Package: 2N5152L, 2N5154L TO-39 (TO-205AD) Package: 2N5152, 2N5154 Maximum Ratings (TC = +25°C unless otherwise noted) Ratings Symbol Value Units Collector - Emitter Voltage VCEO 80 Vdc Collector - Base V

5.34. 2n3902 2n5157.pdf Size:176K _aeroflex

2N5156
2N5156

NPN High Power Silicon Transistors 2N3902 & 2N5157 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/371 • TO-3 (TO-204AA) Package Maximum Ratings Ratings Symbol 2N3902 2N5157 Units Collector - Emitter Voltage VCEO 400 500 Vdc Emitter - Base Voltage VEBO 5.0 6.0 Vdc Collector - Base Voltage VCBO 7.0 Vdc Base Current IB 2.0 Adc Collector Current IC 3.5 Adc Total

Datasheet: 2N5153S , 2N5153SM , 2N5154 , 2N5154-220M , 2N5154A , 2N5154S , 2N5154SM , 2N5155 , BC550 , 2N5157 , 2N516 , 2N5160 , 2N5161 , 2N5162 , 2N517 , 2N5172 , 2N5173 .

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