All Transistors. TIP142 Datasheet

 

TIP142 Datasheet, Equivalent, Cross Reference Search

Type Designator: TIP142

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 125 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 500

Noise Figure, dB: -

Package: TO218

TIP142 Transistor Equivalent Substitute - Cross-Reference Search

 

TIP142 Datasheet (PDF)

1.1. tip142t 3da142t.pdf Size:518K _update

TIP142
TIP142

TIP142T(3DA142T) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于工业仪器的线性开关转换。 Purpose: Linear and switching industrial equipment. 特点: 基极-发射极设有独立的电阻、直流增益高、与 TIP147T(3CA147T)配对。 Features: Monolithic construction with built in base-emitter shunt resistors、High DC current gain complement to TIP147T(

1.2. tip142-147t.pdf Size:57K _st2

TIP142
TIP142

TIP142T TIP147T COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION LOW VOLTAGE HIGH CURRENT HIGH GAIN APPLICATIONS 3 2 GENERAL PURPOSE SWITCHING 1 DESCRIPTION TO-220 The TIP142T is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration, mounte

1.3. tip142f.pdf Size:62K _fairchild_semi

TIP142
TIP142

TIP140F/141F/142F Monolithic Construction With Built In Base- Emitter Shunt Resistors Complement to TIP145F/146F/147F High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) Industrial Use TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Units VCBO

1.4. tip142t.pdf Size:52K _fairchild_semi

TIP142
TIP142

TIP140T/141T/142T Monolithic Construction With Built In Base- Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) Industrial Use Complement to TIP145T/146T/147T TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Equivalent Circuit Symbol Parameter Value Units C

1.5. tip142t 47t.pdf Size:410K _cdil

TIP142
TIP142

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR POWER DARLINGTON TRANSISTORS TIP142T NPN TIP147T PNP TO-220 Plastic Package For use in Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 100 V Emitter Base Voltage VEBO 5.0

1.6. tip142t.pdf Size:107K _inchange_semiconductor

TIP142
TIP142

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor TIP142T DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Complement to Type TIP147T APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=2

1.7. tip142.pdf Size:164K _inchange_semiconductor

TIP142
TIP142

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor TIP142 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Complement to Type TIP147 APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(Ta

Datasheet: TIP136 , TIP137 , TIP140 , TIP140F , TIP140T , TIP141 , TIP141F , TIP141T , S9014 , TIP142F , TIP142T , TIP145 , TIP145F , TIP145T , TIP146 , TIP146F , TIP146T .

 


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