UN412X Datasheet and Replacement
Type Designator: UN412X
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 0.27 kOhm
Built in Bias Resistor R2 = 5 kOhm
Typical Resistor Ratio R1/R2 = 0.054
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO92S
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UN412X Datasheet (PDF)
un4121 un4122 un4123 un4124 un412x un412y.pdf

Transistors with built-in ResistorUN4121/4122/4123/4124/412X/412YSilicon PNP epitaxial planer transistorFor digital circuitsUnit: mm4.0 0.2FeaturesCosts can be reduced through downsizing of the equipment andreduction of the number of parts.New S type package, allowing supply with the radial taping.Resistance by Part Numbermarking(R1)(R2) 1 2 3UN4121 2.2k 2.2k
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SA416 | DMJT9435 | 2N249 | 2SC3298A | 2N5031 | 2SA982 | 92PU36A
Keywords - UN412X transistor datasheet
UN412X cross reference
UN412X equivalent finder
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History: 2SA416 | DMJT9435 | 2N249 | 2SC3298A | 2N5031 | 2SA982 | 92PU36A



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