UN412X Datasheet and Replacement
Type Designator: UN412X
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 0.27 kOhm
Built in Bias Resistor R2 = 5 kOhm
Typical Resistor Ratio R1/R2 = 0.054
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO92S
UN412X Substitution
UN412X Datasheet (PDF)
un4121 un4122 un4123 un4124 un412x un412y.pdf

Transistors with built-in ResistorUN4121/4122/4123/4124/412X/412YSilicon PNP epitaxial planer transistorFor digital circuitsUnit: mm4.0 0.2FeaturesCosts can be reduced through downsizing of the equipment andreduction of the number of parts.New S type package, allowing supply with the radial taping.Resistance by Part Numbermarking(R1)(R2) 1 2 3UN4121 2.2k 2.2k
Datasheet: UN411E , UN411F , UN411H , UN411L , UN4121 , UN4122 , UN4123 , UN4124 , 2SC2383Y , UN412Y , UN4210Q , UN4210R , UN4210S , UN4211 , UN4212 , UN4213 , UN4214 .
Keywords - UN412X transistor datasheet
UN412X cross reference
UN412X equivalent finder
UN412X lookup
UN412X substitution
UN412X replacement



LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irf530n | pn2222a datasheet | tip41c transistor | 2n5087 | ksa1381 | bc546 | 2sc458 | a733 transistor