All Transistors. UN412X Datasheet

 

UN412X Datasheet, Equivalent, Cross Reference Search

Type Designator: UN412X

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in bias resistor R1 = 0.27 kOhm

Built in bias resistor R2 = 5 kOhm

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO92S

UN412X Transistor Equivalent Substitute - Cross-Reference Search

 

UN412X Datasheet (PDF)

1.1. un4121 un4122 un4123 un4124 un412x un412y.pdf Size:84K _panasonic

UN412X
UN412X

Transistors with built-in Resistor UN4121/4122/4123/4124/412X/412Y Silicon PNP epitaxial planer transistor For digital circuits Unit: mm 4.0± 0.2 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. New S type package, allowing supply with the radial taping. Resistance by Part Number marking (R1)(R2) 1 2 3 UN4121 2.2kΩ 2.2kΩ

Datasheet: UN411E , UN411F , UN411H , UN411L , UN4121 , UN4122 , UN4123 , UN4124 , 2N5088 , UN412Y , UN4210Q , UN4210R , UN4210S , UN4211 , UN4212 , UN4213 , UN4214 .

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