All Transistors. FJE5304D Datasheet

 

FJE5304D Datasheet, Equivalent, Cross Reference Search

Type Designator: FJE5304D

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 4 A

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

Package: TO126

FJE5304D Transistor Equivalent Substitute - Cross-Reference Search

 

FJE5304D Datasheet (PDF)

1.1. fje5304d.pdf Size:479K _fairchild_semi

FJE5304D
FJE5304D

FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling diode Suitable for Electronic Ballast Application Small Variance in Storage Time Equivalent Circuit C B TO-126 1 E 1.Emitter 2.Collector 3.Base Absolute Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter Value

Datasheet: FJB102 , FJB3307D , FJD3076 , FJD3305H1 , FJD5304D , FJD5553 , FJD5555 , FJE3303 , 2N3866 , FJI5603D , FJL4215 , FJL4315 , FJL6920(2SJ6920) , FJN3303F , FJP13007 , FJP13009(J13009) , FJP3305 .

 


FJE5304D
  FJE5304D
  FJE5304D
 

social 

LIST

Last Update

BJT: M54561P | M54532P | M54532FP | M54531WP | M54531P | M54531FP | M54530P | M54530FP | M54522WP | LBCW65ALT1G | LBC858CWT1G | LBC848AWT1G | LBC847CPDW1T1G | LBC846ADW1T1G | LBC817-40DPMT1G | LBC817-40DMT1G | LBC817-25DMT1G | LBC817-16DPMT1G | LBC817-16DMT1G | LBC807-40DMT1G |