All Transistors. MMBT2222L Datasheet

 

MMBT2222L Datasheet, Equivalent, Cross Reference Search

Type Designator: MMBT2222L

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Collector Current |Ic max|: 0.6 A

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SOT23

MMBT2222L Transistor Equivalent Substitute - Cross-Reference Search

 

MMBT2222L Datasheet (PDF)

1.1. mmbt2222lt1rev0d.pdf Size:181K _motorola

MMBT2222L
MMBT2222L

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT2222LT1/D MMBT2222LT1 General Purpose Transistors * MMBT2222ALT1 COLLECTOR NPN Silicon 3 *Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol 2222 2222A Unit 2 CollectorEmitter Voltage VCEO 30 40 Vdc CASE 31808, STYLE 6 CollectorBase Voltage VCBO 60 75 Vdc SOT23 (TO236AB) Emitter

1.2. mmbt2222lt1-alt1.pdf Size:126K _onsemi

MMBT2222L
MMBT2222L

MMBT2222LT1G, MMBT2222ALT1G General Purpose Transistors NPN Silicon http://onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO Vdc 2 MMBT2222LT1G 30 MMBT2222ALT1G 40 EMITTER Collector-Base Voltage VCBO Vdc MMBT2222LT1G 60 3 MMBT2222ALT1G 75 Emitt

2.1. mmbt2222awt1rev0.pdf Size:72K _motorola

MMBT2222L
MMBT2222L

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT2222AWT1/D Preliminary Information MMBT2222AWT1 General Purpose Transistor Motorola Preferred Device NPN Silicon These transistors are designed for general purpose amplifier applica- tions. They are housed in the SOT323/SC70 package which is designed for low power surface mount applications. COLLECTOR 3 3 1 1 BASE

2.2. mmbt2222.pdf Size:253K _motorola

MMBT2222L
MMBT2222L

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT2222LT1/D MMBT2222LT1 General Purpose Transistors * MMBT2222ALT1 COLLECTOR NPN Silicon 3 *Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol 2222 2222A Unit 2 CollectorEmitter Voltage VCEO 30 40 Vdc CASE 31808, STYLE 6 CollectorBase Voltage VCBO 60 75 Vdc SOT23 (TO236AB) Emitter

2.3. mmbt2222a 1.pdf Size:52K _philips

MMBT2222L
MMBT2222L

DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBT2222A NPN switching transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN switching transistor MMBT2222A FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 base 2 emitter APPLICATIONS 3 collector Switching and linear amplification. DESCRIPTI

2.4. mmbt2222a.pdf Size:63K _st

MMBT2222L
MMBT2222L

MMBT2222A SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking MMBT2222A M22 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE IS MMBT2907A APPLICATIONS SOT-23 WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE

2.5. mmbt2222.pdf Size:48K _fairchild_semi

MMBT2222L
MMBT2222L

MMBT2222 NPN General Purpose Amplifier Sourced from process 19. C E SOT-23 B Mark: 1B Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 0.6 A TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150

2.6. mmbt2222ak.pdf Size:121K _fairchild_semi

MMBT2222L
MMBT2222L

MMBT2222AK NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1PK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 350 mW TJ,

2.7. mmbt2222at.pdf Size:136K _fairchild_semi

MMBT2222L
MMBT2222L

September 2008 MMBT2222AT NPN Epitaxial Silicon Transistor Features C General purpose amplifier transistor. E Ultra-Small Surface Mount Package for all types. B General purpose switching & amplification application Marking : A02 SOT-523F Absolute Maximum Ratings Ta = 25C unless otherwise noted Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO Collector-Emitt

2.8. mmbt2222a.pdf Size:211K _fairchild_semi

MMBT2222L
MMBT2222L

PN2222A MMBT2222A PZT2222A C C E E C B TO-92 SOT-23 SOT-223 B Mark:1P EBC NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from process 19. Absolute Maximum Ratings * Ta=25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base V

2.9. pn2222a mmbt2222a pzt2222a.pdf Size:174K _fairchild_semi

MMBT2222L

2.10. mmbt2222at.pdf Size:176K _diodes

MMBT2222L
MMBT2222L

MMBT2222AT NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Type Available (MMBT2907AT) C Dim Min Max Typ Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) A 0.15 0.30 0.22 TOP VIEW B C "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 B E C 1.45 1.75 1.60 G Mechanical Data D ? ?

2.11. mmbt2222a.pdf Size:133K _diodes

MMBT2222L
MMBT2222L

MMBT2222A NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Complementary PNP Type Available (MMBT2907A) Case Material: Molded Plastic, Green Molding Compound, Note 5. UL Flammability Classification Rating 94V-0 Ideal for Low Power Amplification and S

2.12. smbt2222a mmbt2222a.pdf Size:81K _infineon

MMBT2222L
MMBT2222L

SMBT2222A/MMBT2222A NPN Silicon Switching Transistor Low collector-emitter saturation voltage 2 3 Complementary type: SMBT2907AW (PNP) 1 Pb-free (RoHS compliant) package1) Qualified according AEC Q101 Type Marking Pin Configuration Package SMBT2222A/MMBT2222A s1P SOT23 1 = B 2 = E 3 = C Maximum Ratings Parameter Symbol Value Unit 40 V Collector-emitter voltage VCEO 75 Coll

2.13. mmbt2222a sot-23.pdf Size:220K _mcc

MMBT2222L
MMBT2222L

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMBT2222A Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation, IC=600mA NPN General Operating and Storage Junction Temperature: -55C to +150C Thermal resistance,Junction to Ambient:500oC/W Purpose Am

2.14. mmbt2222at sot-523.pdf Size:222K _mcc

MMBT2222L
MMBT2222L

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMBT2222AT Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Capable of 150mWatts of Power Dissipation Purpose Amplifier Operating and Storage Junction Temperatur

2.15. nsvmmbt2222att1g.pdf Size:123K _onsemi

MMBT2222L
MMBT2222L

MMBT2222ATT1G, NSVMMBT2222ATT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http://onsemi.com applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. COLLECTOR 3 Features • NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Chang

2.16. mmbt2222am3.pdf Size:168K _onsemi

MMBT2222L
MMBT2222L

MMBT2222AM3T5G NPN General Purpose Transistor The MMBT2222AM3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-723 surface mount http://onsemi.com package. This device is ideal for low-power surface mount applications where board space is at a premium. Features COLLECTOR 3 Reduces Boa

2.17. mmbt2222awt1-d.pdf Size:121K _onsemi

MMBT2222L
MMBT2222L

MMBT2222AWT1 General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. http://onsemi.com Features COLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 MAXIMUM RATINGS BASE Rating Symbol Val

2.18. mmbt2222att1-d.pdf Size:114K _onsemi

MMBT2222L
MMBT2222L

MMBT2222ATT1 General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-416/SC-75 package which is designed for low power surface mount applications. http://onsemi.com Features COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 MAXIMUM RATINGS (TA = 25C) EM

2.19. mmbt2222a.pdf Size:295K _utc

MMBT2222L
MMBT2222L

UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE 3 AMPLIFIER 1 2 ? FEATURES SOT-23 * This device is for use as a medium power amplifier and switch requiring collector currents up to 600mA. 3 1 2 SOT-323 3 1 2 SOT-523 ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MMBT2222AL-AE3-

2.20. mmbt2222at.pdf Size:809K _secos

MMBT2222L
MMBT2222L

MMBT2222AT NPN Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-523 Epitaxial Planar Die Construction Complementary PNP Type Available(MMBT2907FW) Ideal for Medium Power Amplification and Switching MARKING CODE 1P PACKAGE INFORMATION Package MPQ Leader Size Millimete

2.21. mmbt2222aw.pdf Size:1362K _secos

MMBT2222L
MMBT2222L

MMBT2222AW NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURE ? Complementary PNP Type Available(MMBT2907AW) A L ? Epitaxial Planar Die Construction 3 3 ? Ideal for Medium Power Amplification and Switching Top View C B 1 1 2 2 K E D MARKING CODE H J F G MMBT2222AW

2.22. mmbt2222q.pdf Size:251K _secos

MMBT2222L
MMBT2222L

MMBT2222Q NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-89 1.BASE D Dimensions In Millimeters Dimensions In Inches 2.COLLECTOR D1 Symbol A Min Max Min Max 3.EMITTER A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 FEATURES b1 0.360 0.560 0.014 0.022 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 b1 Power diss

2.23. mmbt2222a.pdf Size:278K _secos

MMBT2222L
MMBT2222L

MMBT2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES A COLLECTOR L Epitaxial Planar Die Construction 3 3 3 Complementary PNP Type Available S Top View B (MMBT2907A) 1 1 1 2 Ideal for Medium Power Amplification and BASE 2 Switching V G 2 EMITTER C H J D K MAXIMUM RA

2.24. mmbt2222.pdf Size:602K _htsemi

MMBT2222L

MMBT2222 TRANSISTOR(NPN) SOT–23 FEATURES ? Genernal Purpose Amplifier MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 75 V CBO 2. EMITTER V Collector-Emitter Voltage 30 V CEO 3. COLLECTOR V Emitter-Base Voltage 6 V EBO IC Collector Current 600 mA P Collector Power Dissipation 250 mW C R Thermal Resistan

2.25. mmbt2222a.pdf Size:1250K _htsemi

MMBT2222L
MMBT2222L

MMBT2222A TRANSISTOR(NPN) SOT-23 FEATURES Epitaxial planar die construction 1. BASE Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO 40 V Collector-Emitter Voltage VEBO 6 V Emitter-Base Voltage IC Collector Current -Contin

2.26. mmbt2222.pdf Size:319K _gsme

MMBT2222L
MMBT2222L

? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM2222 GM2222A MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM RATINGS Characteristic Symbol Unit GM2222 GM2222A ???? ?? ?? Collector-Emitter Voltage VCEO 30 40 Vdc ???-????? Collector-Base Voltage VCBO 60 75 Vdc ???-???? Emitter-Base

2.27. mmmbt2222a sot-23.pdf Size:1000K _lge

MMBT2222L
MMBT2222L

MMBT2222A SOT-23 Transistor(NPN) SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING: 1P Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-B

2.28. mmbt2222.pdf Size:569K _wietron

MMBT2222L
MMBT2222L

MMBT2222 MMBT2222A 3 1 2 SOT-23 VCEO u WEITRON http://www.weitron.com.tw MMBT2222 MMBT2222A ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS - DC Current Gain hFE (IC=0.1 mAdc, VCE=10 Vdc) 35 - (IC=1.0 mAdc, VCE=10 Vdc) 50 - - (IC=10 mAdc, VCE=10 Vdc) 75 - 35 (IC=10 mAdc, VCE=10 Vdc, TA=-55

2.29. mmbt2222at.pdf Size:417K _wietron

MMBT2222L
MMBT2222L

MMBT2222AT COLLECTOR Plastic-Encapsulate Transistors 3 3 NPN Silicon 1 2 1 BASE P b Lead(Pb)-Free SC-89 2 EMITTER (SOT-523F) MAXIMUM RATINGS Value Rating Symbol Unit 40 Collector-Emitter Voltage V CEO Vdc 75 Collector-Base Voltage VCBO Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 600 mAdc THERMAL CHARACTERISTICS Characteristics Symbol Unit Max

2.30. mmbt2222aw.pdf Size:407K _wietron

MMBT2222L
MMBT2222L

MMBT2222AW 3 1 2 SOT-323(SC-70) Value VCEO 150 833 T ,Tstg -55 to+150 J MMBT2222AW=P1 (1) u 1. Pulse Test: Pulse Width 300us, Duty Cycle 2.0% WEITRON http://www.weitron.com.tw MMBT2222AW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS(1) DC Current Gain - (IC=0.1 mAdc, VCE=10 Vdc) 35 - (IC=

2.31. mmbt2222-a-lt1.pdf Size:385K _willas

MMBT2222L
MMBT2222L

FM120-M WILLAS THRU MMBT2222(A)LT1 FM1200-M General Purpose Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features NPN • Batch process design, excellent power dissipation offers Silicon better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order t

2.32. mmbt2222awt1.pdf Size:290K _willas

MMBT2222L
MMBT2222L

FM120-M WILLAS THRU MMBT2222AWT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to NPN Silicon

2.33. mmbt2222att1.pdf Size:357K _willas

MMBT2222L
MMBT2222L

FM120-M WILLAS THRU MMBT2222ATT1 General Purpose T BARRIER RECTIFIERS -20V- 200V ransistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process d NPN Siliconeesign, excellent power dissipation offers better reverse l akage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to

2.34. mmbt2222adw1t1.pdf Size:341K _willas

MMBT2222L
MMBT2222L

FM120-M MMBT2222ADW1T1 WILLAS THRU Dual General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to opti

2.35. mmbt2222a.pdf Size:276K _cystek

MMBT2222L
MMBT2222L

Spec. No. : C203N3 Issued Date : 2002.05.11 CYStech Electronics Corp. Revised Date : 2010.11.12 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor MMBT2222A Description • The MMBT2222A is designed for using in driver stage of AF amplifier and general purpose switching application. • High I , I = 0.6A. C(Max) C(Max) • Low V , Typ. V = 0.2V at I /I = 500mA/

2.36. mmbt2222 sot-23.pdf Size:202K _can-sheng

MMBT2222L
MMBT2222L

 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT2222 TRANSISTOR (NPN) FEATURES Complimentary to MMBT2907 MARKING:1P MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单位) VCBO Collector-B

2.37. mmbt2222at.pdf Size:859K _kexin

MMBT2222L
MMBT2222L

SMD Type Transistors NPN Transistors MMBT2222AT (KMBT2222AT) SOT-523 U nit: m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15±0.05 ■ Features 2 1 ● Small Package ● Complementary to MMBT2907AT 3 0.3±0.05 +0.1 0.5-0.1 1. Base 2. Emitter 3. Collecter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Coll

2.38. mmbt2222a.pdf Size:805K _kexin

MMBT2222L
MMBT2222L

D e s st s NPN Transistors MMBT2222A (KMBT2222A) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ 1 2 ● +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9-0.1 ● ) 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 70 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collec

2.39. mmbt2222a.pdf Size:282K _shenzhen-tuofeng-semi

MMBT2222L
MMBT2222L

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR (NPN) SOT-23 FEATURES Epitaxial planar die construction 1. BASE Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 75 V

Datasheet: MJW21194 , MJW21195 , MJW21196 , MJW3281A , MMBT2131 , MMBT2222AL , MMBT2222AM3 , MMBT2222AW , 2N2222 , MMBT2369AL , MMBT2369L , MMBT2484L , MMBT2907AL , MMBT2907AM3T5G , MMBT2907AW , MMBT3416L , MMBT3904L .

 


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