All Transistors. RN1101FS Datasheet

 

RN1101FS Datasheet, Equivalent, Cross Reference Search

Type Designator: RN1101FS

SMD Transistor Code: L0

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.05 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Collector Capacitance (Cc): 1.2 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: fSM

RN1101FS Transistor Equivalent Substitute - Cross-Reference Search

 

RN1101FS Datasheet (PDF)

1.1. rn1101fs rn1102fs rn1103fs rn1104fs rn1105fs rn1106fs.pdf Size:126K _toshiba

RN1101FS
RN1101FS

RN1101FS~RN1106FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101FS,RN1102FS,RN1103FS RN1104FS,RN1105FS,RN1106FS Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever m

1.2. rn1101fs-1106fs l0-1-2-3-4-5 sot823.pdf Size:98K _toshiba

RN1101FS
RN1101FS

RN1101FS~RN1106FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101FS,RN1102FS,RN1103FS RN1104FS,RN1105FS,RN1106FS Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever m

3.1. rn1101f-1106f xa-b-c-d-e-f sot490.pdf Size:147K _toshiba

RN1101FS
RN1101FS

RN1101F?RN1106F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101F,RN1102F,RN1103F RN1104F,RN1105F,RN1106F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2101F~RN2106F Equivalent Circu

3.2. rn1101ft-1106ft xa-b-c-d-e-f sot623.pdf Size:211K _toshiba

RN1101FS
RN1101FS

RN1101FT~RN1106FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101FT, RN1102FT, RN1103FT RN1104FT, RN1105FT, RN1106FT Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor int

Datasheet: HN4B04J , HN4B06J , HN4C05JU , HN4C06J , HN4C08J , HN4C51J , RN1101ACT , RN1101CT , 2N5401 , RN1101MFV , RN1101 , RN1102ACT , RN1102CT , RN1102FS , RN1102MFV , RN1102 , RN1103ACT .

 


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