All Transistors. 2N5830 Datasheet

 

2N5830 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N5830

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO92

2N5830 Transistor Equivalent Substitute - Cross-Reference Search

 

2N5830 Datasheet (PDF)

1.1. 2n5830.pdf Size:294K _fairchild_semi

2N5830
2N5830

Discrete POWER & Signal Technologies 2N5830 C TO-92 B E NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 100 V V Collector-Base

1.2. 2n5830 2n5831.pdf Size:50K _microelectronics

2N5830

5.1. 2n583 2n584 2n640 2n641 2n642 2n643 2n644 2n645 2n656 2n696.pdf Size:298K _rca

2N5830

5.2. 2n5832.pdf Size:67K _mcc

2N5830

MCC Micro Commercial Components 21201 Itasca Street Chatsworth 2N5832 CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Through Hole Package Plastic-case Bipolar NPN Transistor Pin Configuration Bottom View C B E Electrical Characteristics @ 25C Unless Otherwise Specified TO-92 Symbol Parameter Min Max Units A E OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Bre

5.3. 2n5839.pdf Size:379K _no

2N5830
2N5830

5.4. 2n5838.pdf Size:11K _semelab

2N5830

2N5838 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 275V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 3A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acco

5.5. 2n5832.pdf Size:77K _secos

2N5830

2N5832 0.6 A, 160 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES ? General Purpose Switching Transistor TO-92 G H J Millimeter REF. A D Min. Max. A 4.40 4.70 B 4.30 4.70 B C 12.70 - Collector D 3.30 3.81 ?? K E 0.36 0.56 F 0.36 0.51 G 1.27 TYP. H 1.10 - ?? E C F J

5.6. 2n5838 2n5839 2n5840.pdf Size:108K _jmnic

2N5830
2N5830

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5838 2N5839 2N5840 DESCRIPTION ·With TO-3 package ·Low collector-emitter saturation voltage APPLICATIONS ·For use in switching power supply applications and other inductive switching circuits. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximu

5.7. 2n5838 2n5839 2n5840.pdf Size:117K _inchange_semiconductor

2N5830
2N5830

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5838 2N5839 2N5840 DESCRIPTION Ў¤ With TO-3 package Ў¤ Low collector saturation voltage Ў¤ High breakdown voltage APPLICATIONS Ў¤ For use in switching power supply and other inductive switching circuits. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION

Datasheet: 2N5825 , 2N5826 , 2N5827 , 2N5827A , 2N5828 , 2N5828A , 2N5829 , 2N583 , BC337 , 2N5831 , 2N5832 , 2N5833 , 2N5834 , 2N5835 , 2N5836 , 2N5837 , 2N5838 .

 


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