DTD513ZM Datasheet, Equivalent, Cross Reference Search
Type Designator: DTD513ZM
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 1 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Emitter Voltage |Vce|: 12
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.5
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 260
MHz
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: SC-105AA
VMT3
SOT723
DTD513ZM Transistor Equivalent Substitute - Cross-Reference Search
DTD513ZM Datasheet (PDF)
dtd513ze.pdf
500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors) DTD513ZE / DTD513ZM Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTD513ZE1.6 0.7 0.550.3( )3 Feature 1) VCE (sat) is lower than conventional products. ( ) ( )2 10.2 0.22) Built-in bias resistors enable the configuration of 0.15(1) GND0.5 0.5an inverter circuit wit
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
