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DTD513ZM Specs and Replacement


   Type Designator: DTD513ZM
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 1 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 0.1
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 260 MHz
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: SC-105AA VMT3 SOT723
 

 DTD513ZM Substitution

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DTD513ZM detailed specifications

 7.1. Size:178K  rohm
 dtd513ze.pdf pdf_icon

DTD513ZM

500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors) DTD513ZE / DTD513ZM Applications Dimensions (Unit mm) Inverter, Interface, Driver DTD513ZE 1.6 0.7 0.55 0.3 ( ) 3 Feature 1) VCE (sat) is lower than conventional products. ( ) ( ) 2 1 0.2 0.2 2) Built-in bias resistors enable the configuration of 0.15 (1) GND 0.5 0.5 an inverter circuit wit... See More ⇒

Detailed specifications: DTC144EEB , DTC144EM , DTC144EUB , DTC144WE , DTD113ZK , DTD113ZU , DTD123YK , DTD513ZE , TIP31 , DTD523YE , DTD523YM , DTD543EE , DTD543EM , DTD543XE , DTD543XM , DTD543ZE , DTD543ZM .

History: BC239 | 3DA75A

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