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DTD523YM Specs and Replacement


   Type Designator: DTD523YM
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 0.22
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 260 MHz
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: SC-105AA VMT3 SOT723
 

 DTD523YM Substitution

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DTD523YM detailed specifications

 7.1. Size:178K  rohm
 dtd523ye.pdf pdf_icon

DTD523YM

500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors) DTD523YE / DTD523YM Applications Dimensions (Unit mm) Inverter, Interface, Driver DTD523YE 1.6 0.7 0.55 0.3 Feature ( ) 3 1) VCE (sat) is lower than conventional products. 2) Built-in bias resistors enable the configuration of ( ) ( ) 2 1 0.2 0.2 an inverter circuit without connecting external ... See More ⇒

Detailed specifications: DTC144EUB , DTC144WE , DTD113ZK , DTD113ZU , DTD123YK , DTD513ZE , DTD513ZM , DTD523YE , 2SD313 , DTD543EE , DTD543EM , DTD543XE , DTD543XM , DTD543ZE , DTD543ZM , DTD713ZE , DTD713ZM .

History: RN1327A | 3DA75C | 3DA5038

Keywords - DTD523YM transistor specs

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