DTD543EE Datasheet, Equivalent, Cross Reference Search
Type Designator: DTD543EE
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 4.7 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Emitter Voltage |Vce|: 12
V
Maximum Emitter-Base Voltage |Veb|: 12
V
Maximum Collector Current |Ic max|: 0.5
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 260
MHz
Forward Current Transfer Ratio (hFE), MIN: 115
Noise Figure, dB: -
Package: EMT3
DTD543EE Transistor Equivalent Substitute - Cross-Reference Search
DTD543EE Datasheet (PDF)
dtd543ee.pdf
Low VCE (sat) Digital transistors (with built-in resistors) DTD543EE / DTD543EM Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTD543EE1.6 0.70.550.3( )3 Structure NPN digital transistor (Built-in resistor type) ( ) ( )2 10.2 0.20.15(1) GND0.5 0.5(2) IN 1.0EMT3(3) OUTJEITA No. (SC-75A) Feature JEDEC No. Each lead ha
dtd543ze.pdf
DTD543ZE / DTD543ZM Transistors 500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors) DTD543ZE / DTD543ZM Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTD543ZE1.6 0.70.3 0.55 Feature (3)1) VCE (sat) is lower than conventional products. ( ) (1)22) Built-in bias resistors enable the configuration of an 0.2 0.20.15(1) GND
dtd543xe.pdf
DTD543XE / DTD543XM Transistors 500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors) DTD543XE / DTD543XM Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTD543XE1.6 0.70.550.3 Feature ( )31) VCE (sat) is lower than conventional products. 2) Built-in bias resistors enable the configuration of an ( ) ( )2 10.2 0.2inverter ci
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
