DTD543XM Datasheet and Replacement
Type Designator: DTD543XM
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.47
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 260 MHz
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: SC-105AA VMT3 SOT723
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DTD543XM Datasheet (PDF)
dtd543xe.pdf

DTD543XE / DTD543XM Transistors 500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors) DTD543XE / DTD543XM Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTD543XE1.6 0.70.550.3 Feature ( )31) VCE (sat) is lower than conventional products. 2) Built-in bias resistors enable the configuration of an ( ) ( )2 10.2 0.2inverter ci
dtd543ze.pdf

DTD543ZE / DTD543ZM Transistors 500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors) DTD543ZE / DTD543ZM Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTD543ZE1.6 0.70.3 0.55 Feature (3)1) VCE (sat) is lower than conventional products. ( ) (1)22) Built-in bias resistors enable the configuration of an 0.2 0.20.15(1) GND
dtd543ee.pdf

Low VCE (sat) Digital transistors (with built-in resistors) DTD543EE / DTD543EM Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTD543EE1.6 0.70.550.3( )3 Structure NPN digital transistor (Built-in resistor type) ( ) ( )2 10.2 0.20.15(1) GND0.5 0.5(2) IN 1.0EMT3(3) OUTJEITA No. (SC-75A) Feature JEDEC No. Each lead ha
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: D29E2 | BDS28A | KTB2510 | RT1P431S | 2SA3802 | 3DG2878 | OC45N
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History: D29E2 | BDS28A | KTB2510 | RT1P431S | 2SA3802 | 3DG2878 | OC45N



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