All Transistors. DTD713ZE Datasheet

 

DTD713ZE Datasheet and Replacement


   Type Designator: DTD713ZE
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 1 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 0.1
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 260 MHz
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: EMT3
 

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DTD713ZE Datasheet (PDF)

 ..1. Size:178K  rohm
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DTD713ZE

200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors) DTD713ZE / DTD713ZM Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTD713ZE1.6 0.70.550.3 Feature ( )31) VCE (sat) is lower than conventional products. 2) Built-in bias resistors enable the configuration of ( ) ( )2 1an inverter circuit without connecting external 0.2 0.2

Datasheet: DTD523YE , DTD523YM , DTD543EE , DTD543EM , DTD543XE , DTD543XM , DTD543ZE , DTD543ZM , 13005 , DTD713ZM , DTD723YE , DTD723YM , DTD743EE , DTD743EM , DTD743XE , DTD743XM , DTD743ZE .

History: DTD543ZM | 2N961-46 | 2N4926S | AC188 | LBC856BDW1T1G | 2SC943 | KTC3780U

Keywords - DTD713ZE transistor datasheet

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