DTD713ZM PDF Specs and Replacement
Type Designator: DTD713ZM
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 1 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 260 MHz
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: SC-105AA VMT3 SOT723
DTD713ZM Substitution
DTD713ZM PDF detailed specifications
dtd713ze.pdf
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors) DTD713ZE / DTD713ZM Applications Dimensions (Unit mm) Inverter, Interface, Driver DTD713ZE 1.6 0.7 0.55 0.3 Feature ( ) 3 1) VCE (sat) is lower than conventional products. 2) Built-in bias resistors enable the configuration of ( ) ( ) 2 1 an inverter circuit without connecting external 0.2 0.2 ... See More ⇒
Detailed specifications: DTD523YM , DTD543EE , DTD543EM , DTD543XE , DTD543XM , DTD543ZE , DTD543ZM , DTD713ZE , 2SC945 , DTD723YE , DTD723YM , DTD743EE , DTD743EM , DTD743XE , DTD743XM , DTD743ZE , DTD743ZM .
History: KSP20 | 2N5001S | 2N3217 | 2SA505O
Keywords - DTD713ZM pdf specs
DTD713ZM cross reference
DTD713ZM equivalent finder
DTD713ZM pdf lookup
DTD713ZM substitution
DTD713ZM replacement
