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DTD723YM PDF Specs and Replacement


   Type Designator: DTD723YM
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 0.22

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 15 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 260 MHz
   Forward Current Transfer Ratio (hFE), MIN: 140
   Noise Figure, dB: -
   Package: SC-105AA VMT3 SOT723
 

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DTD723YM PDF detailed specifications

 7.1. Size:178K  rohm
 dtd723ye.pdf pdf_icon

DTD723YM

200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors) DTD723YE / DTD723YM Applications Dimensions (Unit mm) Inverter, Interface, Driver DTD723YE 1.6 0.7 0.55 0.3 ( ) 3 Feature ( ) ( ) 2 1 0.2 0.2 1) VCE (sat) is lower than conventional products. 0.15 (1) GND 0.5 0.5 2) Built-in bias resistors enable the configuration of (2) IN 1.0 EMT3 an i... See More ⇒

Detailed specifications: DTD543EM , DTD543XE , DTD543XM , DTD543ZE , DTD543ZM , DTD713ZE , DTD713ZM , DTD723YE , 2SB817 , DTD743EE , DTD743EM , DTD743XE , DTD743XM , DTD743ZE , DTD743ZM , DTDG23YP , KT209B1 .

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