DTD723YM Datasheet, Equivalent, Cross Reference Search
Type Designator: DTD723YM
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.22
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Emitter Voltage |Vce|: 30
V
Maximum Emitter-Base Voltage |Veb|: 15
V
Maximum Collector Current |Ic max|: 0.2
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 260
MHz
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: SC-105AA
VMT3
SOT723
DTD723YM Transistor Equivalent Substitute - Cross-Reference Search
DTD723YM Datasheet (PDF)
dtd723ye.pdf
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors) DTD723YE / DTD723YM Applications Dimensions (Unit : mm) Inverter, Interface, Driver DTD723YE1.6 0.7 0.550.3( )3 Feature ( ) ( )2 10.2 0.21) VCE (sat) is lower than conventional products. 0.15(1) GND0.5 0.52) Built-in bias resistors enable the configuration of (2) IN1.0EMT3an i
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
