All Transistors. C945 Datasheet

 

C945 Datasheet, Equivalent, Cross Reference Search

Type Designator: C945

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 130

Noise Figure, dB: -

Package: SOT23

C945 Transistor Equivalent Substitute - Cross-Reference Search

 

C945 Datasheet (PDF)

0.1. 2pc945 3.pdf Size:47K _philips

C945
C945

DISCRETE SEMICONDUCTORSDATA SHEETndbook, halfpageM3D1862PC945NPN general purpose transistor1999 May 28Product specificationSupersedes data of 1997 Mar 26Philips Semiconductors Product specificationNPN general purpose transistor 2PC945FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 50 V).1 base2 collectorAPPLICATIONS3 emitter

0.2. ksc945 .pdf Size:42K _fairchild_semi

C945
C945

KSC945Audio Frequency Amplifier & High Frequency OSC. Complement to KSA733 Collector-Base Voltage : VCBO=60V High Current Gain Bandwidth Product : fT=300MHz (TYP) Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted

 0.3. ksc945.pdf Size:126K _fairchild_semi

C945
C945

Audio Frequency AmpIifier & High Frequency OSC. Complement to KSA733 Collector-Base Voltage : VCBO=60V High Current Gain Bandwidth Product : fT=300MHz (TYP.)TO-92 1. Emitter 2. Base 3. CollectorNPN EpitaxiaI SiIicon TransistorAbsoIute Maximum Ratings Ta=25C unless otherwise noted SymboI Parameter VaIue UnitsVCBO Collector-Base Voltage 60 VVCEO Coll

0.4. 2sc945.pdf Size:73K _nec

C945

 0.5. 2sc945-y.pdf Size:244K _mcc

C945
C945

MCC2SC945-YMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC945-GRCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.4Watts of Power Dissipation. NPN Silicon Collector-current 0.15APlastic-Encapsulate Collector-base Voltage 60V Operating and storage junction temperature range: -55OC to +150OC

0.6. 2sc945-gr.pdf Size:244K _mcc

C945
C945

MCC2SC945-YMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC945-GRCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Capable of 0.4Watts of Power Dissipation. NPN Silicon Collector-current 0.15APlastic-Encapsulate Collector-base Voltage 60V Operating and storage junction temperature range: -55OC to +150OC

0.7. 2sc945.pdf Size:180K _utc

C945
C945

UNISONIC TECHNOLOGIES CO., LTD 2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor. FEATURES * Collector-Emitter voltage: BVCBO=50V * Collector current up to 150mA * High hFE linearity Lead-free: 2SC945L * Complimentary to UTC 2SA733

0.8. ksc945.pdf Size:73K _utc

C945
C945

UTC KSC945 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC KSC945 is an audio frequency amplifier high frequency OSC NPN transistor. 1FEATURES *Collector-Base voltage: BVCBO=60V TO-92*Collector current up to 150mA *High hFE linearity *Complimentary to KSA733 1:EMITTER 2: BASE 3: COLLECTOR ABSOLUT

0.9. stc945.pdf Size:225K _auk

C945
C945

STC945NPN Silicon TransistorDescription PIN Connection General small signal amplifier CFeatures B Low collector saturation voltage : VCE(sat)=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) E Complementary pair with STA733 TO-92 Ordering Information Type NO. Marking Package Code STC945 STC945 TO-92 Absolute maximum ratings (Ta=25C) C

0.10. 2sc945.pdf Size:226K _no

C945
C945

ST 2SC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA733 is recommended. On special request, these transistors can be 1. Emitter 2. Collector 3. Base manufactured in different pin configurati

0.11. c945.pdf Size:160K _secos

C945
C945

C945 60V, 0.15A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Excellent hFE Linearity AL Low noise 33 Complementary to A733 Top View C B11 22MARKING K EProduct Marking CodeDC945 CRH JF GMillimeter MillimeterREF. REF. PACK

0.12. c945t.pdf Size:496K _secos

C945
C945

C945TNPN SiliconElektronische BauelementePlastic-Encapsulate TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeFEATURES Low noise TO-92Excellent hFE linearity Complementary to A733TMAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Symbol Value UnitsCollector-Base Voltage VCBO 60 V 1Collector-Emitter Voltage VCEO 50 V23

0.13. csc945.pdf Size:259K _cdil

C945
C945

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR CSC945CC8050TO-92Plastic PackageBCEAudio Frequency General Purpose and Driver Stage Amplifier ApplicationComplmentary CSA733ABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base Voltage 60 VVCEOCollector Em

0.14. ktc945.pdf Size:44K _kec

C945
C945

SEMICONDUCTOR KTC945TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESExcellent hFE Linearity.: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.)N DIM MILLIMETERSLow Noise : NF=1dB(Typ.). at f=1kHzA 4.70 MAXEKB 4.80 MAXComplementary to KTA733. GC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85H 0.45_MAXIMUM RATING (Ta=2

0.15. ktc945b.pdf Size:272K _kec

C945
C945

SEMICONDUCTOR KTC945BTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESExcellent hFE Linearity.: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.)N DIM MILLIMETERSLow Noise : NF=1dB(Typ.). at f=1kHzA 4.70 MAXEKB 4.80 MAXComplementary to KTA733B(O, Y, GR class). GC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85H 0.45_MA

0.16. c945.pdf Size:653K _htsemi

C945
C945

C945 TRANSISTOR (NPN) SOT-23 FEATURE Excellent hFE Linearity Low noise 1. BASE 2. EMITTER Complementary to A733 3. COLLECTOR MARKING:CR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 150 mA PC C

0.17. c945.pdf Size:269K _gsme

C945
C945

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GMC945MAXIMUM RATINGS (Ta=25 )MAXIMUM RATINGS (Ta=25) MAXIMUM RATINGS (Ta=25 )CHARACTERISTIC Symbol Rating Unit Collector-Base VoltageVCBO 60 Vdc

0.18. c945 to-92.pdf Size:186K _lge

C945
C945

C945(NPN) TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE linearity Low noise Complementary to A733 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 VDimensions in inches and (millimeters)VEBO Emitter-Base Voltage 5 VIC Colle

0.19. c945 sot-23.pdf Size:217K _lge

C945
C945

C945 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Excellent hFE Linearity: hFE(IC=0.1mA) hFE(IC=2mA)=0.95(Typ.) Low noise Complementary to A733 MARKING:CR Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltag

0.20. c945.pdf Size:2172K _wietron

C945
C945

C945NPN TransistorsTO-92P b Lead(Pb)-Free1. EMITTER122. COLLECTOR33. BASE0.4Junction Temperature Tj +150 CStorage Temperature T -40 to + 150 CSTGWEITRON1/4 08-Feb-06http://www.weitron.com.twC945ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)Characteristics Symbol Min Typ Max UnitON CHARACTERISTICSDC Current GainhFE1VCE=

0.21. c945lt1.pdf Size:2032K _wietron

C945
C945

C945LT1NPN Transistors3P b Lead(Pb)-Free12C945LT1=CRWEITRONhttp://www.weitron.com.twC945LT1ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Min Typ Max UnitON CHARACTERISTICSDC Current GainhFE --130400(IC=1 mAdc, VCE=6.0 Vdc)Collector-Emitter Saturation VoltageVCE(sat) - Vdc- 0.3 (IC=100 mAdc, IB=10mAdc)

0.22. c945.pdf Size:929K _willas

C945
C945

FM120-M WILLASTHRUC945 SOT-23 Plastic-Encapsulate Transistors FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toTRANSI

0.23. hsc945.pdf Size:51K _hsmc

C945
C945

Spec. No. : HE6517HI-SINCERITYIssued Date : 1995.02.11Revised Date : 2004.08.09MICROELECTRONICS CORP.Page No. : 1/5HSC945NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HSC945 is designed for using driver stage of AP amplifier and low speedswitching applications.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature ...................................

0.24. c945.pdf Size:222K _shenzhen

C945

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors TO-92 C945 TRANSISTOR (NPN ) 1.EMITTER FEATURE Excellent hFE linearity 2.COLLECTOR Low noise 3. BASE Complementary to A733 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1 2 3 Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Volt

0.25. 2sc945.pdf Size:272K _shenzhen

C945
C945

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC945 TRANSISTOR (NPN) FEATURE 1. BASE Excellent hFE Linearity2. EMITTER Low noise 3. COLLECTOR Complementary to A733 MARKING:CR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emi

0.26. btc945a3.pdf Size:309K _cystek

C945
C945

Spec. No. : C204A3 Issued Date : 2003.04.01 CYStech Electronics Corp.Revised Date : 2014.06.10 Page No. : 1 / 7 General Purpose NPN Epitaxial Planar Transistor BTC945A3Description The BTC945A3 is designed for use in driver stage of AF amplifier and low speed switching. Complementary to BTA733A3. Pb-free package Symbol Outline BTC945A3 TO-92 BBase C

0.27. c945.pdf Size:346K _can-sheng

C945
C945

TO-92 Plastic-Encapsulate TransistorsFEATURETO-92 Excellent hFE linearity Low noise1.EMITTER Complementary to A7332.BASEMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS (TA=25 unless otherwise noted)MAXIMUM RATINGS3.COLLECTORSymbol Parameter Value UnitsSymbol Parameter Value UnitsSymbol Parameter Value UnitsSymbol Parameter Value Units1 2 3VCBO 60 V

0.28. c945 sot-23.pdf Size:285K _can-sheng

C945
C945

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors C945 TRANSISTOR (NPN) FEATURES Complimentary to A733 MARKING:CR. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Vol

0.29. 2sc945m.pdf Size:1517K _blue-rocket-elect

C945
C945

2SC945M(BR3DG945M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features ,High voltage, excellent hFE linearity. / Applications General power amplifier application and low speed switching.

0.30. 2sc945lt1.pdf Size:634K _china

C945
C945

SEMICONDUCTOR 2SC945LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Collector Current: Ic= 150mA * Collector-Emitter Voltage:Vce= 50V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo 60 V

0.31. ftc945b.pdf Size:66K _first_silicon

C945

SEMICONDUCTORFTC945BTECHNICAL DATANPN TRANSISTOR B CFEATURE Excellent hFE linearity DIM MILLIMETERS Low noise A 4.70 MAXEB 4.80 MAXG Complementary to FTA733B C 3.70 MAXDD 0.55 MAXE 1.00MAXIMUM RATINGS (Ta=25 unless otherwise noted) F 1.27G 0.85H 0.45Symbol Parameter Value Units_HJ 14.00 + 0.50L 2.30F FVCBO Collector-Base Voltage 60 V

0.32. 2sc945.pdf Size:781K _kexin

C945
C945

SMD TypeSMD Type si o orsSMD Type TranDistdesNPN Transistors2SC945SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector current up to 150mA High hFE linearity1 2 Complementary to 2SA733+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector

0.33. 2sc945.pdf Size:189K _inchange_semiconductor

C945
C945

isc Silicon NPN Transistor 2SC945DESCRIPTIONHigh VoltageExcellent h linearityFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDsigned for use in driver stage of AF amplifierand low speed switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Vol

Datasheet: A1015 , A42 , A44 , A733 , A92 , A94 , B772 , C1815 , BF199 , CJF715 , D882 , HM4033 , HM879 , KTA1668 , KTA2014 , KTD1898 , M28S .

 

 
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