All Transistors. 2N5976 Datasheet

 

2N5976 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N5976

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 75 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 ¬įC

Transition Frequency (ft): 2 MHz

Collector Capacitance (Cc): 300 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO126

2N5976 Transistor Equivalent Substitute - Cross-Reference Search

 

2N5976 Datasheet (PDF)

5.1. 2n5971.pdf Size:12K _semelab

2N5976

2N5971 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 15A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acco

5.2. 2n5970.pdf Size:100K _jmnic

2N5976
2N5976

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5970 DESCRIPTION ·With TO-3 package ·Low-collector emitter saturation voltage APPLICATIONS ·Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=?) SYMBOL PARA

 5.3. 2n5973.pdf Size:93K _jmnic

2N5976
2N5976

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5973 DESCRIPTION ·With TO-3 package ·Low collector-emitter saturation voltage APPLICATIONS ·Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=?) SYMBOL PARA

5.4. 2n5972.pdf Size:115K _jmnic

2N5976
2N5976

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5972 DESCRIPTION ·With TO-3 package ·Low-collector emitter saturation voltage APPLICATIONS ·Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=?) SYMBOL PARA

 5.5. 2n5970.pdf Size:117K _inchange_semiconductor

2N5976
2N5976

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5970 DESCRIPTION Ў¤ With TO-3 package Ў¤ Low collector saturation voltage Ў¤ High power dissipations APPLICATIONS Ў¤ Designed for general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maxim

5.6. 2n5973.pdf Size:116K _inchange_semiconductor

2N5976
2N5976

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5973 DESCRIPTION Ў¤ With TO-3 package Ў¤ Low collector saturation voltage Ў¤ High power dissipations APPLICATIONS Ў¤ Designed for general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maxim

5.7. 2n5972.pdf Size:117K _inchange_semiconductor

2N5976
2N5976

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ Low collector saturation voltage Ў¤ High power dissipations APPLICATIONS Ў¤ Designed for general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5972 Fig.1 simplified outline (TO-3) and symbol Absolute maxi

Datasheet: 2N5969 , 2N597 , 2N5970 , 2N5971 , 2N5972 , 2N5973 , 2N5974 , 2N5975 , 2SC2625 , 2N5977 , 2N5978 , 2N5979 , 2N598 , 2N5980 , 2N5981 , 2N5982 , 2N5983 .

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