All Transistors. KRA317 Datasheet

 

KRA317 Datasheet, Equivalent, Cross Reference Search

Type Designator: KRA317

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: USM

KRA317 Transistor Equivalent Substitute - Cross-Reference Search

 

KRA317 Datasheet (PDF)

1.1. kra317v.pdf Size:425K _kec

KRA317
KRA317

SEMICONDUCTOR KRA316V~KRA322V EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B ·With Built-in Bias Resistors. ·Simplify Circuit Design. DIM MILLIMETERS 2 _ ·Reduce a Quantity of Parts and Manufacturing Process. A 1.2 +0.05 _ B 0.8 +0.05 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 _ E 1.2 + 0.05 _ G

5.1. kra310 14.pdf Size:368K _kec

KRA317
KRA317

SEMICONDUCTOR KRA310~KRA314 EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E M B M FEATURES DIM MILLIMETERS ·With Built-in Bias Resistors. _ + A 2.00 0.20 D 2 _ + B 1.25 0.15 ·Simplify Circuit Design. _ + C 0.90 0.10 3 1 ·Reduce a Quantity of Parts and Manufacturing Process. D 0.3+0.10/-0.05 _ +

5.2. kra310 14e.pdf Size:56K _kec

KRA317
KRA317

SEMICONDUCTOR KRA310E~KRA314E EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B DIM MILLIMETERS With Built-in Bias Resistors. _ + A 1.60 0.10 D Simplify Circuit Design. _ + 2 B 0.85 0.10 _ + C 0.70 0.10 Reduce a Quantity of Parts and Manufacturing Process. 3 1 D 0.27+0.10/-0.05 _ High Pack

5.3. kra316 22.pdf Size:391K _kec

KRA317
KRA317

SEMICONDUCTOR KRA316~KRA322 EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES M B M ·With Built-in Bias Resistors. DIM MILLIMETERS _ + A 2.00 0.20 ·Simplify Circuit Design. D 2 _ + B 1.25 0.15 ·Reduce a Quantity of Parts and Manufacturing Process. _ + C 0.90 0.10 3 1 D 0.3+0.10/-0.05 _ + E

5.4. kra316v 322v.pdf Size:68K _kec

KRA317
KRA317

SEMICONDUCTOR KRA316V~KRA322V EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B With Built-in Bias Resistors. Simplify Circuit Design. DIM MILLIMETERS 2 _ Reduce a Quantity of Parts and Manufacturing Process. A 1.2 +0.05 _ B 0.8 +0.05 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 _ E 1.2 + 0.05 _ G 0.8 0

5.5. kra310v 314v.pdf Size:48K _kec

KRA317
KRA317

SEMICONDUCTOR KRA310V~KRA314V EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ·With Built-in Bias Resistors. ·Simplify Circuit Design. DIM MILLIMETERS 2 _ ·Reduce a Quantity of Parts and Manufacturing Process. A 1.2 +0.05 _ B 0.8 +0.05 ·High Packing Density. 1 3 _ C 0.5 + 0.05 _ D 0.3 +

5.6. kra316e.pdf Size:425K _kec

KRA317
KRA317

SEMICONDUCTOR KRA316E~KRA322E EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B DIM MILLIMETERS ·With Built-in Bias Resistors. _ + A 1.60 0.10 D ·Simplify Circuit Design. _ + 2 B 0.85 0.10 _ + C 0.70 0.10 ·Reduce a Quantity of Parts and Manufacturing Process. 3 1 D 0.27+0.10/-0.05 _ + E 1

5.7. kra316 22e.pdf Size:68K _kec

KRA317
KRA317

SEMICONDUCTOR KRA316E~KRA322E EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B DIM MILLIMETERS ·With Built-in Bias Resistors. _ + A 1.60 0.10 D ·Simplify Circuit Design. _ + 2 B 0.85 0.10 _ + C 0.70 0.10 ·Reduce a Quantity of Parts and Manufacturing Process. 3 1 D 0.27+0.10/-0.05 _ + E 1

5.8. kra311e.pdf Size:389K _kec

KRA317
KRA317

SEMICONDUCTOR KRA310E~KRA314E EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B DIM MILLIMETERS ·With Built-in Bias Resistors. _ + A 1.60 0.10 D ·Simplify Circuit Design. _ + 2 B 0.85 0.10 _ + C 0.70 0.10 ·Reduce a Quantity of Parts and Manufacturing Process. 3 1 D 0.27+0.10/-0.05 _ ·H

Datasheet: KRA313E , KRA313V , KRA314 , KRA314E , KRA314V , KRA316 , KRA316E , KRA316V , TIP3055 , KRA317E , KRA317V , KRA318 , KRA318E , KRA318V , KRA319 , KRA319E , KRA319V .

 


KRA317
  KRA317
  KRA317
 

social 

LIST

Last Update

BJT: M54561P | M54532P | M54532FP | M54531WP | M54531P | M54531FP | M54530P | M54530FP | M54522WP | LBCW65ALT1G | LBC858CWT1G | LBC848AWT1G | LBC847CPDW1T1G | LBC846ADW1T1G | LBC817-40DPMT1G | LBC817-40DMT1G | LBC817-25DMT1G | LBC817-16DPMT1G | LBC817-16DMT1G | LBC807-40DMT1G |