All Transistors. KRC657F Datasheet

 

KRC657F Datasheet, Equivalent, Cross Reference Search

Type Designator: KRC657F

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.05 W

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TFSV

KRC657F Transistor Equivalent Substitute - Cross-Reference Search

 

KRC657F Datasheet (PDF)

4.1. krc657 9u.pdf Size:49K _kec

KRC657F
KRC657F

SEMICONDUCTOR KRC657U~KRC659U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. 1 5 DIM MILLIMETERS _ A 2.00 + 0.20 Simplify Circuit Design. 2 _ A1 1.3 + 0.1 _ B 2.1 + 0.1 Reduce a Quantity of Parts and Manufacturing Process. 3 4 D _ B1 1.25 + 0.1 C 0.65 D 0.2+0

4.2. krc657e 659e.pdf Size:49K _kec

KRC657F
KRC657F

SEMICONDUCTOR KRC657E~KRC659E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ·With Built-in Bias Resistors. 1 5 DIM MILLIMETERS ·Simplify Circuit Design. _ A 1.6 0.05 + ·Reduce a Quantity of Parts and Manufacturing Process. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 ·High Packing Density. _ +

5.1. krc658f.pdf Size:389K _kec

KRC657F
KRC657F

SEMICONDUCTOR KRC657F~KRC659F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 ·With Built-in Bias Resistors. ·Simplify Circuit Design. ·Reduce a Quantity of Parts and Manufacturing Process. DIM MILLIMETERS ·Thin Fine Pitch Super mini 5pin Package. _ + A 1.0 0.05 _ + A1 0.7 0.05 _ + B 1.

5.2. krc652f.pdf Size:394K _kec

KRC657F
KRC657F

SEMICONDUCTOR KRC651F~KRC654F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 ·With Built-in Bias Resistors. ·Simplify Circuit Design. ·Reduce a Quantity of Parts and Manufacturing Process. DIM MILLIMETERS ·High Packing Density. _ + A 1.0 0.05 _ + A1 0.7 0.05 ·Thin Fine Pitch Super mini

5.3. krc651u.pdf Size:427K _kec

KRC657F
KRC657F

SEMICONDUCTOR KRC651U~KRC656U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 ·With Built-in Bias Resistors. 1 5 DIM MILLIMETERS _ ·Simplify Circuit Design. A 2.00 + 0.20 2 _ A1 1.3 + 0.1 ·Reduce a Quantity of Parts and Manufacturing Process. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 ·High Packi

5.4. krc651f.pdf Size:394K _kec

KRC657F
KRC657F

SEMICONDUCTOR KRC651F~KRC654F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 ·With Built-in Bias Resistors. ·Simplify Circuit Design. ·Reduce a Quantity of Parts and Manufacturing Process. DIM MILLIMETERS ·High Packing Density. _ + A 1.0 0.05 _ + A1 0.7 0.05 ·Thin Fine Pitch Super mini

5.5. krc652u.pdf Size:427K _kec

KRC657F
KRC657F

SEMICONDUCTOR KRC651U~KRC656U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 ·With Built-in Bias Resistors. 1 5 DIM MILLIMETERS _ ·Simplify Circuit Design. A 2.00 + 0.20 2 _ A1 1.3 + 0.1 ·Reduce a Quantity of Parts and Manufacturing Process. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 ·High Packi

5.6. krc651e 656e.pdf Size:70K _kec

KRC657F
KRC657F

SEMICONDUCTOR KRC651E~KRC656E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES ·With Built-in Bias Resistors. ·Simplify Circuit Design. 1 5 DIM MILLIMETERS _ A 1.6 0.05 + ·Reduce a Quantity of Parts and Manufacturing Process. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 ·High Packing Density. _ +

5.7. krc653f.pdf Size:394K _kec

KRC657F
KRC657F

SEMICONDUCTOR KRC651F~KRC654F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 ·With Built-in Bias Resistors. ·Simplify Circuit Design. ·Reduce a Quantity of Parts and Manufacturing Process. DIM MILLIMETERS ·High Packing Density. _ + A 1.0 0.05 _ + A1 0.7 0.05 ·Thin Fine Pitch Super mini

Datasheet: KRC654E , KRC654F , KRC654U , KRC655E , KRC655U , KRC656E , KRC656U , KRC657E , TIP42C , KRC657U , KRC658E , KRC658F , KRC658U , KRC659E , KRC659F , KRC659U , KRC660E .

 


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