All Transistors. 2SA1036KRLT1 Datasheet

 

2SA1036KRLT1 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA1036KRLT1

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 32 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 7 pF

Forward Current Transfer Ratio (hFE), MIN: 180

Noise Figure, dB: -

Package: SOT-23

2SA1036KRLT1 Transistor Equivalent Substitute - Cross-Reference Search

 

2SA1036KRLT1 Datasheet (PDF)

1.1. l2sa1036krlt1g.pdf Size:167K _lrc

2SA1036KRLT1
2SA1036KRLT1

LESHAN RADIO COMPANY, LTD. Medium Power Transistor (*32V, *0.5A) L2SA1036KQLT1G Series L2SA1036KQLT1G Series S-L2SA1036KQLT1G Series FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage 3 operation. 3) We declare that the material of product compliance with RoHS requirements. 1 4)S- Prefix for Automotive and Other Applications Requiring Unique Site 2 a

2.1. 2sa1036kfra.pdf Size:1030K _update

2SA1036KRLT1
2SA1036KRLT1

AEC-Q101 Qualified Medium Power Transistor 2SA1036KFRA Features Dimensions (Unit : mm) 1) Large IC. ICMAX. = -500mA 2) Low VCE(sat). Ideal for low-voltage 2SA1036KFRA 2SA1036K operation. ± 2.9 0.2 1.1 +0.2 2SC2411KFRA 3) Complements the 2SC2411K. ± ± 1.9 0.2 -0.1 ± 0.8 0.1 0.95 0.95 (1) (2) 0~0.1 Structure Epitaxial planer type (3) PNP silicon transistor

2.2. 2sa1036kgp.pdf Size:95K _update

2SA1036KRLT1
2SA1036KRLT1

CHENMKO ENTERPRISE CO.,LTD 2SA1036KGP SURFACE MOUNT Medium Power PNP Transistor VOLTAGE 32 Volts CURRENT 0.5 Ampere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. (SOT-23) SOT-23 * Low saturation voltage V CE(sat)=-0.4V(max.)(IC=-100mA) * Low cob. Cob=7.0pF(Typ.) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. (1) (3)

 2.3. l2sa1036kplt1g.pdf Size:165K _upd

2SA1036KRLT1
2SA1036KRLT1

LESHAN RADIO COMPANY, LTD. Medium Power Transistor (*32V, *0.5A) L2SA1036KQLT1G Series L2SA1036KQLT1G Series S-L2SA1036KQLT1G Series FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage 3 operation. 3) We declare that the material of product compliance with RoHS requirements. 1 4)S- Prefix for Automotive and Other Applications Requiring Unique Site 2 a

2.4. 2sa1036k 2sa1577 2sa854s.pdf Size:101K _rohm

2SA1036KRLT1
2SA1036KRLT1

Transistors Medium Power Transistor (*32V, *0.5A) 2SA1036K / 2SA1577 / 2SA854S FFeatures FExternal dimensions (Units: mm) 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. FStructure Epitaxial planar type PNP silicon transistor (96-86-B11) 204 Transistors 2SA1036K / 2SA1577 / 2SA854S FAbsolute maximum

 2.5. 2sa854 2sa1036k 2sa1577.pdf Size:101K _rohm

2SA1036KRLT1
2SA1036KRLT1

Transistors Medium Power Transistor (*32V, *0.5A) 2SA1036K / 2SA1577 / 2SA854S FFeatures FExternal dimensions (Units: mm) 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. FStructure Epitaxial planar type PNP silicon transistor (96-86-B11) 204 Transistors 2SA1036K / 2SA1577 / 2SA854S FAbsolute maximum

2.6. 2sa1036k.pdf Size:162K _rohm

2SA1036KRLT1
2SA1036KRLT1

Medium Power Transistor 2SA1036K ?Features ?Dimensions (Unit : mm) 1) Large IC. ICMAX. = -500mA 2) Low VCE(sat). Ideal for low-voltage 2SA1036K operation. 2.9 0.2 1.1 +0.2 3) Complements the 2SC2411K. 1.9 0.2 -0.1 0.8 0.1 0.95 0.95 (1) (2) 0~0.1 ?Structure Epitaxial planer type (3) PNP silicon transistor +0.1 0.15 -0.06 0.4 +0.1 -0.05 All terminals

2.7. 2sa1036k.pdf Size:225K _lge

2SA1036KRLT1
2SA1036KRLT1

2SA1036K SOT-23-3L Transistor(PNP) SOT-23-3L 1. BASE 2.92 2. EMITTER 0.35 1.17 3. COLLECTOR Features 2.80 1.60 Large IC. IC= -500 mA Low VCE(sat). Ideal for low-voltage operation. 0.15 1.90 MARKING : HP, HQ, HR Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Co

2.8. 2sa1036k.pdf Size:210K _wietron

2SA1036KRLT1
2SA1036KRLT1

2SA1036K PNP General Purpose Transistors 3 1 P b Lead(Pb)-Free 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Symbol Value Unit Collector-Emitter Voltage VCEO -32 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -500* mA Total Device Dissipation PD 0.2 mW TA=25°C Tj °C Junction Temperature +150 Tstg Storage Temperature -55

2.9. 2sa1036kxlt1.pdf Size:329K _willas

2SA1036KRLT1
2SA1036KRLT1

FM120-M WILLAS 2SA1036KxLT1 THRU (*32V, *0.5A) Medium Power Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to op

2.10. l2sa1036kqlt1g.pdf Size:165K _lrc

2SA1036KRLT1
2SA1036KRLT1

LESHAN RADIO COMPANY, LTD. Medium Power Transistor (*32V, *0.5A) L2SA1036KQLT1G Series L2SA1036KQLT1G Series S-L2SA1036KQLT1G Series FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage 3 operation. 3) We declare that the material of product compliance with RoHS requirements. 1 4)S- Prefix for Automotive and Other Applications Requiring Unique Site 2 a

Datasheet: KRC243M , KRC244 , KRC245 , KRC245M , KRC246 , KRC246M , KRX210T , 2SA1036KQLT1 , 2N3053 , 2SA1037AKQLT1 , 2SA1037AKRLT1 , 2SA1037AKSLT1 , 2SA1576AQT1 , 2SA1576ART1 , 2SA812QLT1 , 2SA812RLT1 , 2SA812SLT1 .

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