All Transistors. HLB123SA Datasheet

 

HLB123SA Datasheet, Equivalent, Cross Reference Search

Type Designator: HLB123SA

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 1.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO-92

HLB123SA Transistor Equivalent Substitute - Cross-Reference Search

 

HLB123SA Datasheet (PDF)

1.1. hlb123sa.pdf Size:187K _hsmc

HLB123SA
HLB123SA

Spec. No. : HA200601 HI-SINCERITY Issued Date : 2006.12.01 Revised Date : 2009.07,02 MICROELECTRONICS CORP. Page No. : 1/6 HLB123SA NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch TO-92 • Switch Regulators • PWM Inverters and Motor Controls • Solenoid and Relay Drivers • Deflection Circuits Absolute Maximum Ratings Param

4.1. hlb123t.pdf Size:40K _hsmc

HLB123SA
HLB123SA

Spec. No. : HT200402 HI-SINCERITY Issued Date : 1993.05.15 Revised Date : 2006.02.20 MICROELECTRONICS CORP. Page No. : 1/4 HLB123T NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123T is designed for high voltage. High speed switching inductive circuits and amplifier applications. Features TO-126 • High Speed Switching • Low Saturation Voltage • High Reliability Absolute M

4.2. hlb123i.pdf Size:53K _hsmc

HLB123SA
HLB123SA

Spec. No. : HI200202 HI-SINCERITY Issued Date : 2002.06.01 Revised Date : 2005.07.13 MICROELECTRONICS CORP. Page No. : 1/5 HLB123I NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123I is designed for high voltage. High speed switching inductive circuits and amplifier applications. TO-251 Features • High Speed Switching • Low Saturation Voltage • High Reliability Absolute M

4.3. HLB123D.pdf Size:47K _hsmc

HLB123SA
HLB123SA

Spec. No. : HE6603 HI-SINCERITY Issued Date : 1993.03.15 Revised Date : 2005.08.16 MICROELECTRONICS CORP. Page No. : 1/5 HLB123D NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123D is designed for high voltage. High speed switching inductive circuits and amplifier applications. Features TO-126ML • High Speed Switching • Low Saturation Voltage • High Reliability Absolute M

Datasheet: HJ882 , HLB120A , HLB121A , HLB121D , HLB121I , HLB122I , HLB123D , HLB123I , BC547C , HLB123T , HLB124E , HLB125HE , HM112 , HM117 , HM2222A , HM2907A , HM3669 .

 


HLB123SA
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